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  1. Optical and Structural Properties of Nanostructured CuIn0.7Ga0.3(Se(1−x)Tex)2 Chalcopyrite Thin Films—Effect of Stoichiometry and Annealing
  2. Temperature and tellurium (Te) dependence of electrical characterization and surface properties for a chalcopyrite structured schottky barrier diode
  3. The impact of different ZnO growth methods on the electrical and optical properties of a n-ZnO/p-GaN:Mg/c-plane sapphire UV LED
  4. The influence of stoichiometry and annealing temperature on the properties of CuIn 0.7 Ga 0.3 Se 2 and CuIn 0.7 Ga 0.3 Te 2 thin films
  5. The influence of annealing temperature and tellurium (Te) on electrical and dielectrical properties of Al/p-CIGSeTe/Mo Schottky diodes
  6. Evaluation of the hydrostatic pressure effect on Mn/p-Si Schottky barrier diode electrical parameters and interface states
  7. Electrical characterization of a pre-ceramic polymer modified Ag/poly(hydridocarbyne)/p-Si Schottky barrier diode
  8. Current-conduction mechanisms in Au/n-CdTe Schottky solar cells in the wide temperature range