The influence of annealing temperature and tellurium (Te) on electrical and dielectrical properties of Al/p-CIGSeTe/Mo Schottky diodes

  • S. Fiat, İ. Polat, E. Bacaksiz, M. Kompitsas, G. Çankaya
  • Current Applied Physics, August 2013, Elsevier
  • DOI: 10.1016/j.cap.2013.03.006

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http://dx.doi.org/10.1016/j.cap.2013.03.006

The following have contributed to this page: songül fiat varol and Dr Michael Kompitsas