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  1. Analysis of drain current saturation behaviour in GaN Polarisation Super Junction HFETs

    Article • IET Power Electronics, August 2018, the Institution of Engineering and Technology (the IET)

    Shankar Ekkanath Madathil

  2. A new power semiconductor device design

    Article • IET Power Electronics, September 2017, the Institution of Engineering and Technology (the IET)

    Shankar Ekkanath Madathil, PENG LUO