All Stories

  1. Reconfigurable, Non‐Volatile Switching in WO 3 Film for Resistive Memory and Multistate Programming Toward Energy‐Efficient Neuromorphic Computing Applications

    Article • Advanced Electronic Materials, January 2026, Wiley

    Dr Ramesh Thamankar

  2. Analog switching with high pass filtering in a Pt/h-BN/Pt memristor using double layered h-BN

    Article • Materials Letters, January 2026, Elsevier

    Dr Ramesh Thamankar

  3. Ionic sensing using natural indigo molecules and its impact on inhibitory and excitatory postsynaptic currents in an artificial synaptic device

    Article • AIP Advances, August 2025, American Institute of Physics

    Dr Ramesh Thamankar

  4. Quantized Conductance and Multilevel Memory Operation in Mn3O4 Nanowire Network Devices Combined with Low Voltage Operation and Oxygen Vacancy Induced Resistive Switching

    Article • Advanced Electronic Materials, July 2025, Wiley

    Dr Ramesh Thamankar

  5. Quantum Conductance in MoO3/TiO2 Heterojunction Memristors: Crafting Controlled Analog-to-Digital Transition for Multilevel Memory Applications

    Article • ACS Applied Electronic Materials, July 2025, American Chemical Society (ACS)

    Dr Ramesh Thamankar

  6. Resistive Switching in CaF2-MoS2 Nanocomposite thin films for low energy memory and neuromorphic applications

    Article • Surfaces and Interfaces, May 2025, Elsevier

    Dr Ramesh Thamankar

  7. Persistent photoconductivity and Emulating Ebbinghaus forgetting curve via characterization of excitatory synaptic transmission in a ZnO-based optoelectronic synapse with ultra-low power (

    Article • Applied Surface Science, March 2025, Elsevier

    Dr Ramesh Thamankar

  8. A low-energy consuming, optically and electrically stimulated artificial synapse based on lead-free metal halide perovskite (Cs3Cu2I5) for neuromorphic applications

    Article • Materials Advances, January 2025, Royal Society of Chemistry

    Dr Ramesh Thamankar

  9. Wavelength dependent bidirectional photoconductivity in carbon quantum dot embedded in indigo molecular layer with enhanced detectivity

    Article • Materials Advances, January 2025, Royal Society of Chemistry

    Dr Ramesh Thamankar

  10. Emulating Ebbinghaus forgetting behavior in a neuromorphic device based on low dimensional h-BN

    Article • AIP Advances, August 2024, American Institute of Physics

    Dr Ramesh Thamankar

  11. Guidelines for the Design of Random Telegraph Noise-Based True Random Number Generators

    Article • IEEE Transactions on Device and Materials Reliability, June 2024, Institute of Electrical & Electronics Engineers (IEEE)

    Dr Ramesh Thamankar

  12. Spike rate dependent synaptic characteristics in lamellar, multilayered alpha-MoO3 based two-terminal devices – efficient way to control the synaptic amplification

    Article • RSC Advances, January 2024, Royal Society of Chemistry

    Dr Ramesh Thamankar

  13. Combined optical and electrical control of a low-power consuming (∼fJ) two-terminal organic artificial synapse for associative learning and neuromorphic applications

    Article • Nanoscale, January 2024, Royal Society of Chemistry

    Dr Ramesh Thamankar

  14. Investigation of the transient photo-response and switching window of an Al/indigo/Al device: unveiling negative photoconductivity and the photo-enhanced memory window

    Article • Materials Advances, January 2024, Royal Society of Chemistry

    Dr Ramesh Thamankar

  15. Coexistence of synaptic behaviour and negative differential resistance at room temperature in the resistive switching device based on natural indigo molecules

    Article • Dyes and Pigments, November 2023, Elsevier

    Dr Ramesh Thamankar

  16. Reliability Analysis of Random Telegraph Noisebased True Random Number Generators

    Article • October 2023, Institute of Electrical & Electronics Engineers (IEEE)

    Dr Ramesh Thamankar

  17. Bio-inspired artificial synapse for neuromorphic computing based on NiO nanoparticle thin film

    Article • Scientific Reports, May 2023, Springer Science + Business Media

    Dr Ramesh Thamankar

  18. Quantum dot-embedded Molecular based high-performance artificial synapse

    Article • APL Materials, April 2023, American Institute of Physics

    Dr Ramesh Thamankar

  19. Room-Temperature Deep-UV Photoluminescence from Low-Dimensional Hexagonal Boron Nitride Prepared Using a Facile Synthesis

    Article • ACS Omega, September 2022, American Chemical Society (ACS)

    Dr Ramesh Thamankar

  20. A Comparative Study of Crystallography and Defect Structure of Corneal Nipple Array in Daphnis nerii Moth and Papilio polytes Butterfly Eye

    Article • ACS Omega, September 2020, American Chemical Society (ACS)

    Dr Ramesh Thamankar

  21. Localized characterization of charge transport and random telegraph noise at the nanoscale in HfO2 films combining scanning tunneling microscopy and multi-scale simulations

    Article • Journal of Applied Physics, July 2017, American Institute of Physics

    Dr Ramesh Thamankar

  22. A non-volatile resistive memory effect in 2,2′,6,6′-tetraphenyl-dipyranylidene thin films as observed in field-effect transistors and by conductive atomic force microscopy

    Article • RSC Advances, January 2017, Royal Society of Chemistry

    Denis Fichou, Dr Ramesh Thamankar

  23. Correction: A non-volatile resistive memory effect in 2,2′,6,6′-tetraphenyl-dipyranylidene thin films as observed in field-effect transistors and by conductive atomic force microscopy

    Article • RSC Advances, January 2017, Royal Society of Chemistry

    Dr Ramesh Thamankar

  24. Highly Luminescent Heterostructured Copper-Doped Zinc Sulfide Nanocrystals for Application in Cancer Cell Labeling

    Article • ChemPhysChem, June 2016, Wiley

    Edison Huixiang Ang, Dr Ramesh Thamankar

  25. Understanding the switching mechanism in RRAM using in-situ TEM

    Article • June 2016, Institute of Electrical & Electronics Engineers (IEEE)

    Dr Ramesh Thamankar

  26. Observation of resistive switching by physical analysis techniques

    Article • May 2016, Institute of Electrical & Electronics Engineers (IEEE)

    Dr Ramesh Thamankar

  27. CAFM based spectroscopy of stress-induced defects in HfO<inf>2</inf> with experimental evidence of the clustering model and metastable vacancy defect state

    Article • April 2016, Institute of Electrical & Electronics Engineers (IEEE)

    Dr Ramesh Thamankar

  28. Performance of ultra‐thin HfO2‐based MIM devices after oxygen modulation and post‐metallization annealing in N2

    Article • phys stat sol (a), March 2016, Wiley

    Dr Ramesh Thamankar

  29. Single vacancy defect spectroscopy on HfO2 using random telegraph noise signals from scanning tunneling microscopy

    Article • Journal of Applied Physics, February 2016, American Institute of Physics

    Dr Ramesh Thamankar

  30. An SEM/STM based nanoprobing and TEM study of breakdown locations in HfO2/SiOx dielectric stacks for failure analysis

    Article • Microelectronics Reliability, August 2015, Elsevier

    Dr Ramesh Thamankar

  31. Localized Random Telegraphic Noise Study in HfO<inf>2</inf> dielectric stacks using Scanning Tunneling Microscopy — Analysis of process and stress-induced traps

    Article • June 2015, Institute of Electrical & Electronics Engineers (IEEE)

    Dr Ramesh Thamankar

  32. Understanding defect kinetics in ultra-thin dielectric logic and memory devices using random telegraph noise analysis

    Article • June 2015, Institute of Electrical & Electronics Engineers (IEEE)

    Dr Ramesh Thamankar

  33. Single-Crystal Au Triangles as Reconfigurable Contacts for Atomically Smooth Surfaces: Ultra-High Vacuum Transfer-Printing

    Article • January 2015, Springer Science + Business Media

    Dr Ramesh Thamankar

  34. Low temperature nanoscale electronic transport on the MoS2 surface

    Article • Applied Physics Letters, August 2013, American Institute of Physics

    Ramesh thamankar, Kuan Eng Johnson Goh, Dr Ramesh Thamankar

  35. Nanoscale physical analysis of localized breakdown events in HfO<inf>2</inf>/SiO<inf>X</inf> dielectric stacks: A correlation study of STM induced BD with C-AFM and TEM

    Article • July 2012, Institute of Electrical & Electronics Engineers (IEEE)

    Dr Ramesh Thamankar

  36. Atomic Scale Interconnection Machine

    Article • January 2012, Springer Science + Business Media

    Dr Ramesh Thamankar

  37. Solid State Nano Gears Manipulations

    Article • January 2012, Springer Science + Business Media

    Dr Ramesh Thamankar

  38. Surface Conductance Measurements on a MoS2 Surface Using a UHV-Nanoprobe System

    Article • January 2012, Springer Science + Business Media

    Dr Ramesh Thamankar

  39. Tilting, Bending, and Nonterminal Sites inCO/Cu(001...

    Article • Physical Review Letters, March 2011, American Physical Society (APS)

    Dr Ramesh Thamankar

  40. Spin-polarized transport in magnetically assembled carbon nanotube spin valves

    Article • Applied Physics Letters, July 2006, American Institute of Physics

    Dr Ramesh Thamankar

  41. Evidence for superparamagnetism in ultrathin Fe and FexMn1−x films on Cu(100)

    Article • Journal of Magnetism and Magnetic Materials, April 2005, Elsevier

    Dr Ramesh Thamankar

  42. Structural and magnetic properties of Fe-rich FexMn1−x ultrathin alloy films on Cu(1117)

    Article • Journal of Magnetism and Magnetic Materials, April 2005, Elsevier

    Dr Ramesh Thamankar

  43. Evolution of magnetic properties at the interface Fe x Mn 1– x /Ni

    Article • December 2004, Wiley

    Dr Ramesh Thamankar

  44. Magnetically Assembled Multiwalled Carbon Nanotubes on Ferromagnetic Contacts

    Article • The Journal of Physical Chemistry B, December 2004, American Chemical Society (ACS)

    Dr Ramesh Thamankar

  45. Effect of submonolayer coverage of Fe and Mn films on the magnetization direction of Ni/Cu(100)

    Article • Journal of Magnetism and Magnetic Materials, October 2004, Elsevier

    Dr Ramesh Thamankar

  46. Perpendicular anisotropy in Ni rich NixMn1 xultrathin films

    Article • Journal of Physics Condensed Matter, August 2004, Institute of Physics Publishing

    Dr Ramesh Thamankar

  47. Instabilites in ultrathin Fe-rich alloy films on (100)

    Article • Journal of Magnetism and Magnetic Materials, May 2004, Elsevier

    Dr Ramesh Thamankar

  48. Tuning spin reorientation transition of Ni/Cu(100) by Fe cap layers

    Article • Journal of Magnetism and Magnetic Materials, May 2004, Elsevier

    Dr Ramesh Thamankar

  49. Tuning spin reorientation transition of Ni/Cu(1 0 0) by Fe cap layers

    Article • Journal of Magnetism and Magnetic Materials, May 2004, Elsevier

    Dr Ramesh Thamankar

  50. Structural and magnetic instabilities in ultrathin Fe-rich alloy films on Cu(100)

    Article • Physical Review B, February 2004, American Physical Society (APS)

    Dr Ramesh Thamankar

  51. Structural and magnetic properties of ultrathin fccFex

    Article • Physical Review B, February 2004, American Physical Society (APS)

    Dr Ramesh Thamankar

  52. Spin-reorientation transition inFex

    Article • October 2002, American Physical Society (APS)

    Dr Ramesh Thamankar

  53. Spin reorientation transition in Fe/sub x/Ni/sub 1-x/ alloy films

    Article • IEEE Transactions on Magnetics, September 2002, Institute of Electrical & Electronics Engineers (IEEE)

    Dr Ramesh Thamankar

  54. Reorientation transition in ultrathin alloy films

    Article • Institute of Electrical & Electronics Engineers (IEEE)

    Dr Ramesh Thamankar