All Stories

  1. Spike rate dependent synaptic characteristics in lamellar, multilayered alpha-MoO3 based two-terminal devices – efficient way to control the synaptic amplification

    Article • RSC Advances, January 2024, Royal Society of Chemistry

    Dr Ramesh Thamankar

  2. Coexistence of synaptic behaviour and negative differential resistance at room temperature in the resistive switching device based on natural indigo molecules

    Article • Dyes and Pigments, November 2023, Elsevier

    Dr Ramesh Thamankar

  3. Bio-inspired artificial synapse for neuromorphic computing based on NiO nanoparticle thin film

    Article • Scientific Reports, May 2023, Springer Science + Business Media

    Dr Ramesh Thamankar

  4. Quantum dot-embedded Molecular based high-performance artificial synapse

    Article • APL Materials, April 2023, American Institute of Physics

    Dr Ramesh Thamankar

  5. Room-Temperature Deep-UV Photoluminescence from Low-Dimensional Hexagonal Boron Nitride Prepared Using a Facile Synthesis

    Article • ACS Omega, September 2022, American Chemical Society (ACS)

    Dr Ramesh Thamankar

  6. A Comparative Study of Crystallography and Defect Structure of Corneal Nipple Array in Daphnis nerii Moth and Papilio polytes Butterfly Eye

    Article • ACS Omega, September 2020, American Chemical Society (ACS)

    Dr Ramesh Thamankar

  7. Localized characterization of charge transport and random telegraph noise at the nanoscale in HfO2 films combining scanning tunneling microscopy and multi-scale simulations

    Article • Journal of Applied Physics, July 2017, American Institute of Physics

    Dr Ramesh Thamankar

  8. A non-volatile resistive memory effect in 2,2′,6,6′-tetraphenyl-dipyranylidene thin films as observed in field-effect transistors and by conductive atomic force microscopy

    Article • RSC Advances, January 2017, Royal Society of Chemistry

    Denis Fichou, Dr Ramesh Thamankar

  9. Correction: A non-volatile resistive memory effect in 2,2′,6,6′-tetraphenyl-dipyranylidene thin films as observed in field-effect transistors and by conductive atomic force microscopy

    Article • RSC Advances, January 2017, Royal Society of Chemistry

    Dr Ramesh Thamankar

  10. Highly Luminescent Heterostructured Copper-Doped Zinc Sulfide Nanocrystals for Application in Cancer Cell Labeling

    Article • ChemPhysChem, June 2016, Wiley

    Edison Huixiang Ang, Dr Ramesh Thamankar

  11. Understanding the switching mechanism in RRAM using in-situ TEM

    Article • June 2016, Institute of Electrical & Electronics Engineers (IEEE)

    Dr Ramesh Thamankar

  12. Observation of resistive switching by physical analysis techniques

    Article • May 2016, Institute of Electrical & Electronics Engineers (IEEE)

    Dr Ramesh Thamankar

  13. CAFM based spectroscopy of stress-induced defects in HfO<inf>2</inf> with experimental evidence of the clustering model and metastable vacancy defect state

    Article • April 2016, Institute of Electrical & Electronics Engineers (IEEE)

    Dr Ramesh Thamankar

  14. Performance of ultra‐thin HfO2‐based MIM devices after oxygen modulation and post‐metallization annealing in N2

    Article • physica status solidi (a), March 2016, Wiley

    Dr Ramesh Thamankar

  15. Single vacancy defect spectroscopy on HfO2 using random telegraph noise signals from scanning tunneling microscopy

    Article • Journal of Applied Physics, February 2016, American Institute of Physics

    Dr Ramesh Thamankar

  16. An SEM/STM based nanoprobing and TEM study of breakdown locations in HfO2/SiOx dielectric stacks for failure analysis

    Article • Microelectronics Reliability, August 2015, Elsevier

    Dr Ramesh Thamankar

  17. Localized Random Telegraphic Noise Study in HfO<inf>2</inf> dielectric stacks using Scanning Tunneling Microscopy — Analysis of process and stress-induced traps

    Article • June 2015, Institute of Electrical & Electronics Engineers (IEEE)

    Dr Ramesh Thamankar

  18. Understanding defect kinetics in ultra-thin dielectric logic and memory devices using random telegraph noise analysis

    Article • June 2015, Institute of Electrical & Electronics Engineers (IEEE)

    Dr Ramesh Thamankar

  19. Single-Crystal Au Triangles as Reconfigurable Contacts for Atomically Smooth Surfaces: Ultra-High Vacuum Transfer-Printing

    Article • January 2015, Springer Science + Business Media

    Dr Ramesh Thamankar

  20. Low temperature nanoscale electronic transport on the MoS2 surface

    Article • Applied Physics Letters, August 2013, American Institute of Physics

    Ramesh thamankar, Kuan Eng Johnson Goh, Dr Ramesh Thamankar

  21. Nanoscale physical analysis of localized breakdown events in HfO<inf>2</inf>/SiO<inf>X</inf> dielectric stacks: A correlation study of STM induced BD with C-AFM and TEM

    Article • July 2012, Institute of Electrical & Electronics Engineers (IEEE)

    Dr Ramesh Thamankar

  22. Atomic Scale Interconnection Machine

    Article • January 2012, Springer Science + Business Media

    Dr Ramesh Thamankar

  23. Solid State Nano Gears Manipulations

    Article • January 2012, Springer Science + Business Media

    Dr Ramesh Thamankar

  24. Surface Conductance Measurements on a MoS2 Surface Using a UHV-Nanoprobe System

    Article • January 2012, Springer Science + Business Media

    Dr Ramesh Thamankar

  25. Tilting, Bending, and Nonterminal Sites inCO/Cu(001...

    Article • Physical Review Letters, March 2011, American Physical Society (APS)

    Dr Ramesh Thamankar

  26. Spin-polarized transport in magnetically assembled carbon nanotube spin valves

    Article • Applied Physics Letters, July 2006, American Institute of Physics

    Dr Ramesh Thamankar

  27. Evidence for superparamagnetism in ultrathin Fe and FexMn1−x films on Cu(100)

    Article • Journal of Magnetism and Magnetic Materials, April 2005, Elsevier

    Dr Ramesh Thamankar

  28. Structural and magnetic properties of Fe-rich FexMn1−x ultrathin alloy films on Cu(1117)

    Article • Journal of Magnetism and Magnetic Materials, April 2005, Elsevier

    Dr Ramesh Thamankar

  29. Evolution of magnetic properties at the interface Fe x Mn 1– x /Ni

    Article • December 2004, Wiley

    Dr Ramesh Thamankar

  30. Magnetically Assembled Multiwalled Carbon Nanotubes on Ferromagnetic Contacts

    Article • The Journal of Physical Chemistry B, December 2004, American Chemical Society (ACS)

    Dr Ramesh Thamankar

  31. Effect of submonolayer coverage of Fe and Mn films on the magnetization direction of Ni/Cu(100)

    Article • Journal of Magnetism and Magnetic Materials, October 2004, Elsevier

    Dr Ramesh Thamankar

  32. Perpendicular anisotropy in Ni rich NixMn1 xultrathin films

    Article • Journal of Physics Condensed Matter, August 2004, Institute of Physics Publishing

    Dr Ramesh Thamankar

  33. Instabilites in ultrathin Fe-rich alloy films on (100)

    Article • Journal of Magnetism and Magnetic Materials, May 2004, Elsevier

    Dr Ramesh Thamankar

  34. Tuning spin reorientation transition of Ni/Cu(100) by Fe cap layers

    Article • Journal of Magnetism and Magnetic Materials, May 2004, Elsevier

    Dr Ramesh Thamankar

  35. Tuning spin reorientation transition of Ni/Cu(1 0 0) by Fe cap layers

    Article • Journal of Magnetism and Magnetic Materials, May 2004, Elsevier

    Dr Ramesh Thamankar

  36. Structural and magnetic instabilities in ultrathin Fe-rich alloy films on Cu(100)

    Article • Physical Review B, February 2004, American Physical Society (APS)

    Dr Ramesh Thamankar

  37. Structural and magnetic properties of ultrathin fccFex

    Article • Physical Review B, February 2004, American Physical Society (APS)

    Dr Ramesh Thamankar

  38. Spin-reorientation transition inFex

    Article • October 2002, American Physical Society (APS)

    Dr Ramesh Thamankar

  39. Spin reorientation transition in Fe/sub x/Ni/sub 1-x/ alloy films

    Article • IEEE Transactions on Magnetics, September 2002, Institute of Electrical & Electronics Engineers (IEEE)

    Dr Ramesh Thamankar

  40. Reorientation transition in ultrathin alloy films

    Article • Institute of Electrical & Electronics Engineers (IEEE)

    Dr Ramesh Thamankar