All Stories

  1. Interlayer hybridization in a van der Waals quantum spin-Hall insulator/superconductor heterostructure

    Article • AIP Advances, March 2023, American Institute of Physics

    Kuan Eng Johnson Goh

  2. Isoemissive Photoluminescence from a Quaternary System of Valley-Polarized, Defect-Bound Excitons and Trions in Two-Dimensional Transition Metal Dichalcogenides

    Article • The Journal of Physical Chemistry C, June 2021, American Chemical Society (ACS)

    Kuan Eng Johnson Goh

  3. Impact of S-Vacancies on the Charge Injection Barrier at the Electrical Contact with the MoS2 Monolayer

    Article • ACS Nano, January 2021, American Chemical Society (ACS)

    Kuan Eng Johnson Goh

  4. Deep learning-enabled prediction of 2D material breakdown

    Article • Nanotechnology, December 2020, Institute of Physics Publishing

    Kuan Eng Johnson Goh

  5. Gaussian Thermionic Emission Model for Analysis of Au/MoS2 Schottky-Barrier Devices

    Article • Physical Review Applied, November 2020, American Physical Society (APS)

    Kuan Eng Johnson Goh

  6. Quantum Transport in Two-Dimensional WS2 with High-Efficiency Carrier Injection through Indium Alloy Contacts

    Article • ACS Nano, September 2020, American Chemical Society (ACS)

    Yee Sin Ang, Kuan Eng Johnson Goh

  7. Tuning the Conductivity Type in Monolayer WS 2 and MoS 2 by Sulfur Vacancies

    Article • physica status solidi (RRL) - Rapid Research Letters, July 2020, Wiley

    Kuan Eng Johnson Goh

  8. Back Cover: Toward Valley‐Coupled Spin Qubits (Adv. Quantum Technol. 6/2020)

    Article • Advanced Quantum Technologies, June 2020, Wiley

    Kuan Eng Johnson Goh

  9. Toward Valley‐Coupled Spin Qubits

    Article • Advanced Quantum Technologies, May 2020, Wiley

    Kuan Eng Johnson Goh

  10. Band Nesting Bypass in WS2 Monolayers via Förster Resonance Energy Transfer

    Article • ACS Nano, May 2020, American Chemical Society (ACS)

    Kuan Eng Johnson Goh

  11. Correction to Metallic 1T Phase, 3d1 Electronic Configuration and Charge Density Wave Order in Molecular-Beam Epitaxy Grown Monolayer Vanadium Ditelluride

    Article • ACS Nano, December 2019, American Chemical Society (ACS)

    Kuan Eng Johnson Goh

  12. Detecting MoS2 and MoSe2 with optical contrast simulation

    Article • Progress in Natural Science Materials International, December 2019, Elsevier

    Kuan Eng Johnson Goh

  13. Metallic 1T Phase, 3d1 Electronic Configuration and Charge Density Wave Order in Molecular Beam Epitaxy Grown Monolayer Vanadium Ditelluride

    Article • ACS Nano, November 2019, American Chemical Society (ACS)

    Kuan Eng Johnson Goh

  14. Coulomb Blockade in Etched Single- and Few-Layer MoS2 Nanoribbons

    Article • ACS Applied Electronic Materials, October 2019, American Chemical Society (ACS)

    Kuan Eng Johnson Goh

  15. Carrier control in 2D transition metal dichalcogenides with Al2O3 dielectric

    Article • Scientific Reports, June 2019, Springer Science + Business Media

    Kuan Eng Johnson Goh

  16. Evidence of Spin Frustration in a Vanadium Diselenide Monolayer Magnet

    Article • Advanced Materials, April 2019, Wiley

    Kuan Eng Johnson Goh, Dr. Giovanni Vinai

  17. Protected hole valley states in single-layer MoS2

    Article • January 2019, American Physical Society (APS)

    Kuan Eng Johnson Goh

  18. Far out-of-equilibrium spin populations trigger giant spin injection into atomically thin MoS2

    Article • Nature Physics, January 2019, Springer Science + Business Media

    Kuan Eng Johnson Goh

  19. Electrical Doping Effect of Vacancies on Monolayer MoS2

    Article • The Journal of Physical Chemistry C, January 2019, American Chemical Society (ACS)

    Kuan Eng Johnson Goh

  20. Single layer MoS2 nanoribbon field effect transistor

    Article • Applied Physics Letters, January 2019, American Institute of Physics

    Kuan Eng Johnson Goh

  21. Effect of Phonons on Valley Depolarization in Monolayer WSe2

    Article • Electronic Materials Letters, July 2018, Springer Science + Business Media

    Kuan Eng Johnson Goh

  22. Roadmap on finding chiral valleys: screening 2D materials for valleytronics

    Article • Nano Futures, June 2018, Institute of Physics Publishing

    Kuan Eng Johnson Goh

  23. Emergence of photoluminescence on bulk MoS2 by laser thinning and gold particle decoration

    Article • Nano Research, March 2018, Tsinghua University Press

    Kuan Eng Johnson Goh

  24. Modification of Vapor Phase Concentrations in MoS2 Growth Using a NiO Foam Barrier

    Article • ACS Nano, January 2018, American Chemical Society (ACS)

    Kuan Eng Johnson Goh

  25. Electronic properties of atomically thin MoS2 layers grown by physical vapour deposition: band structure and energy level alignment at layer/substrate interfaces

    Article • RSC Advances, January 2018, Royal Society of Chemistry

    Kuan Eng Johnson Goh

  26. Interlayer interactions in 2D WS2/MoS2 heterostructures monolithically grown by in situ physical vapor deposition

    Article • Nanoscale, January 2018, Royal Society of Chemistry

    Kuan Eng Johnson Goh

  27. Electrically conductive filament for 3D-printed circuits and sensors

    Article • Applied Materials Today, December 2017, Elsevier

    Kuan Eng Johnson Goh

  28. Enriched Fluorescence Emission from WS2 Monoflake Empowered by Au Nanoexplorers

    Article • Advanced Optical Materials, June 2017, Wiley

    Kuan Eng Johnson Goh

  29. A Lab-scale Spin and Angular Resolved Photoemission Spectroscopy Capability for 2D Valleytronics

    Article • MRS Advances, December 2016, Cambridge University Press

    Kuan Eng Johnson Goh

  30. Nanoscale characterization of oxidized ultrathin Co-films by ballistic electron emission microscopy

    Article • Materials Research Express, January 2016, Institute of Physics Publishing

    Kuan Eng Johnson Goh

  31. Electrically-Excited Surface Plasmon Polaritons with Directionality Control

    Article • ACS Photonics, March 2015, American Chemical Society (ACS)

    Kuan Eng Johnson Goh

  32. Electronically Transparent Graphene Barriers against Unwanted Doping of Silicon

    Article • ACS Applied Materials & Interfaces, November 2014, American Chemical Society (ACS)

    Kuan Eng Johnson Goh

  33. Low temperature nanoscale electronic transport on the MoS2 surface

    Article • Applied Physics Letters, August 2013, American Institute of Physics

    Ramesh thamankar, Kuan Eng Johnson Goh, Dr Ramesh Thamankar

  34. Temperature-dependent relaxation current on single and dual layer Pt metal nanocrystal-based Al2O3/SiO2 gate stack

    Article • Journal of Applied Physics, November 2012, American Institute of Physics

    Kuan Eng Johnson Goh

  35. Dangling-Bond Wire Circuits on a Si(001)-(2x1):H Surface with Their Contacting Nanopads

    Article • October 2012, Springer Science + Business Media

    Kuan Eng Johnson Goh

  36. Effect of surface contamination on electron tunneling in the high bias range

    Article • Journal of Vacuum Science & Technology A Vacuum Surfaces and Films, July 2012, American Vacuum Society

    Kuan Eng Johnson Goh

  37. Patterning of sub-1 nm dangling-bond lines with atomic precision alignment on H:Si(100) surface at room temperature

    Article • Nanotechnology, June 2012, Institute of Physics Publishing

    Kuan Eng Johnson Goh

  38. The electronic barrier height of silicon native oxides at different oxidation stages

    Article • Journal of Applied Physics, March 2012, American Institute of Physics

    Kuan Eng Johnson Goh

  39. Subthreshold characteristics of ballistic electron emission spectra

    Article • Journal of Applied Physics, January 2012, American Institute of Physics

    Kuan Eng Johnson Goh

  40. Barrier height determination of Au/Oxidized GaAs/n-GaAs using ballistic electron emission spectroscopy

    Article • Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena, January 2012, American Vacuum Society

    Kuan Eng Johnson Goh

  41. Electronic properties of ultrathin high-κ dielectrics studied by ballistic electron emission microscopy

    Article • Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena, September 2011, American Vacuum Society

    Kuan Eng Johnson Goh

  42. Study of the charge leakage of dual layer Pt metal nanocrystal-based high-κ/SiO2 flash memory cell - a relaxation current point of view

    Article • July 2011, Institute of Electrical & Electronics Engineers (IEEE)

    Kuan Eng Johnson Goh

  43. Using patterned H-resist for controlled three-dimensional growth of nanostructures

    Article • Applied Physics Letters, April 2011, American Institute of Physics

    Kuan Eng Johnson Goh

  44. Study of automatic recovery on the metal nanocrystal-based Al2O3/SiO2 gate stack

    Article • Applied Physics Letters, February 2011, American Institute of Physics

    Kuan Eng Johnson Goh

  45. Ballistic Electron Emission Microscopy on Hybrid Metal/Organic/Semiconductor Interfaces

    Article • December 2010, World Scientific Pub Co Pte Lt

    Kuan Eng Johnson Goh

  46. Scanning Probe Microscopy

    Article • December 2010, World Scientific Pub Co Pte Lt

    Kuan Eng Johnson Goh

  47. Tri-Level Resistive Switching in Metal-Nanocrystal-Based $\hbox{Al}_{2}\hbox{O}_{3}/\hbox{SiO}_{2}$ Gate Stack

    Article • IEEE Transactions on Electron Devices, November 2010, Institute of Electrical & Electronics Engineers (IEEE)

    Kuan Eng Johnson Goh

  48. Dual parameter ballistic electron emission spectroscopy analysis of inhomogeneous interfaces

    Article • Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena, July 2010, American Vacuum Society

    Kuan Eng Johnson Goh

  49. Scanning Probe Microscopy

    Article • January 2010, World Scientific Pub Co Pte Lt

    Kuan Eng Johnson Goh

  50. Impact of Si growth rate on coherent electron transport in Si:P delta-doped devices

    Article • Applied Physics Letters, October 2009, American Institute of Physics

    Kuan Eng Johnson Goh

  51. Electrostatic effects of nanoscale dielectric patches in the modification of Schottky contacts

    Article • Physical Review B, April 2009, American Physical Society (APS)

    Kuan Eng Johnson Goh

  52. Enhancing electron transport in Si:P delta-doped devices by rapid thermal anneal

    Article • Applied Physics Letters, October 2008, American Institute of Physics

    Kuan Eng Johnson Goh

  53. Imaging buried organic islands by spatially resolved ballistic electron emission spectroscopy

    Article • Nanotechnology, October 2008, Institute of Physics Publishing

    Kuan Eng Johnson Goh

  54. Morphology and electrical conduction of Si:P δ-doped layers on vicinal Si(001)

    Article • Journal of Applied Physics, September 2008, American Institute of Physics

    Kuan Eng Johnson Goh

  55. Electron-electron interactions in highly disordered two-dimensional systems

    Article • Physical Review B, June 2008, American Physical Society (APS)

    Kuan Eng Johnson Goh

  56. Ohmic conduction of sub-10nm P-doped silicon nanowires at cryogenic temperatures

    Article • Applied Physics Letters, February 2008, American Institute of Physics

    Kuan Eng Johnson Goh

  57. Atomic-scale silicon device fabrication

    Article • International Journal of Nanotechnology, January 2008, Inderscience Publishers

    Kuan Eng Johnson Goh

  58. Use of low-temperature Hall effect to measure dopant activation: Role of electron-electron interactions

    Article • Physical Review B, November 2007, American Physical Society (APS)

    Kuan Eng Johnson Goh

  59. Bilayer gate dielectric study by scanning tunneling microscopy

    Article • Applied Physics Letters, September 2007, American Institute of Physics

    Kuan Eng Johnson Goh

  60. One-dimensional conduction properties of highly phosphorus-doped planar nanowires patterned by scanning probe microscopy

    Article • Physical Review B, August 2007, American Physical Society (APS)

    Kuan Eng Johnson Goh

  61. Atomically precise silicon device fabrication

    Article • August 2007, Institute of Electrical & Electronics Engineers (IEEE)

    Kuan Eng Johnson Goh

  62. Use of a scanning electron microscope to pattern large areas of a hydrogen resist for electrical contacts

    Article • Journal of Applied Physics, August 2007, American Institute of Physics

    Kuan Eng Johnson Goh

  63. Realization of Atomically Controlled Dopant Devices in Silicon

    Article • Small, April 2007, Wiley

    Kuan Eng Johnson Goh

  64. Electronic properties of atomically abrupt tunnel junctions in silicon

    Article • Physical Review B, March 2007, American Physical Society (APS)

    Kuan Eng Johnson Goh

  65. Comparison of GaP and PH3 as dopant sources for STM-based device fabrication

    Article • Nanotechnology, January 2007, Institute of Physics Publishing

    Kuan Eng Johnson Goh

  66. Electrical properties of atomically controlled Si:P nanowires created by scanning probe microscopy

    Article • January 2007, American Institute of Physics

    Kuan Eng Johnson Goh

  67. Narrow, highly P-doped, planar wires in silicon created by scanning probe microscopy

    Article • Nanotechnology, December 2006, Institute of Physics Publishing

    Kuan Eng Johnson Goh

  68. Influence of doping density on electronic transport in degenerate Si:Pδ-doped layers

    Article • Physical Review B, January 2006, American Physical Society (APS)

    Kuan Eng Johnson Goh

  69. The use of etched registration markers to make four-terminal electrical contacts to STM-patterned nanostructures

    Article • Nanotechnology, September 2005, Institute of Physics Publishing

    Kuan Eng Johnson Goh

  70. Relevance of phosphorus incorporation and hydrogen removal for Si:Pδ-doped layers fabricated using phosphine

    Article • physica status solidi (a), May 2005, Wiley

    Kuan Eng Johnson Goh

  71. Scanning probe microscopy for silicon device fabrication

    Article • Molecular Simulation, May 2005, Taylor & Francis

    Kuan Eng Johnson Goh

  72. Effective removal of hydrogen resists used to pattern devices in silicon using scanning tunneling microscopy

    Article • Applied Physics Letters, April 2005, American Institute of Physics

    Kuan Eng Johnson Goh

  73. The fabrication of devices in silicon using scanning probe microscopy

    Article • February 2005, SPIE

    Kuan Eng Johnson Goh

  74. Effect of encapsulation temperature on Si:P δ-doped layers

    Article • Applied Physics Letters, November 2004, American Institute of Physics

    Kuan Eng Johnson Goh

  75. Toward Atomic-Scale Device Fabrication in Silicon Using Scanning Probe Microscopy

    Article • Nano Letters, October 2004, American Chemical Society (ACS)

    Kuan Eng Johnson Goh

  76. Minimisation of P surface segregation during epitaxial silicon growth for the fabrication of a silicon-based quantum computer

    Article • Institute of Electrical & Electronics Engineers (IEEE)

    Kuan Eng Johnson Goh