All Stories

  1. Study on Microgratings Using Imaging, Spectroscopic, and Fourier Lens Scatterometry
  2. 69-3: New Multiplexing Method for Quasi Static and Artefact Free Color LED Matrix Displays
  3. New generation of Fourier optics viewing angle measurement systems
  4. Polarimetric multispectral bidirectional reflectance distribution function measurements using a Fourier transform instrument
  5. 72-3: Optical Characterization of a Transparent LCD Using a Fourier-Optics Multispectral Viewing-Angle System
  6. 36-3: Emissive and Reflective Properties of Vehicle Displays Measured using Fourier-Optics Viewing-Angle Instruments
  7. Emissive and reflective properties of curved displays in relation to image quality
  8. Multispectral BRDF measurements on anisotropic samples: application to metallic surfaces and OLED displays
  9. Alignment-free characterization of 2D gratings
  10. Fast Spectral BRDF & BTDF Measurements for Characterization of Displays and Components
  11. Optical characterization of OLED displays
  12. Paper No S11.2: Spectral BRDF and BTDF of Display Optical Components
  13. Paper No S13.3: Optical Characterization of OLED Displays
  14. 42.4: How to Perform Viewing Angle Measurements on Curved Displays
  15. P-67: Viewing Angle and Imaging Multispectral Characterization of OLED Displays
  16. In-depth assessment of organic LED display quality
  17. New generation of Fourier optics instruments for fast multispectral BRDF characterization
  18. Viewing angle and imaging multispectral analysis of OLED display light emission
  19. 41.4: New Strategy for Characterization of Multi-view Auto-stereoscopic Displays using Fourier Optics Viewing Angle Instrument
  20. Viewing Angle and Imaging Polarization Analysis of Liquid Crystal Displays and Their Components
  21. Practical resolution requirements of measurement instruments for precise characterization of autostereoscopic 3D displays
  22. Optical characterization of auto-stereoscopic 3D displays: interest of the resolution and comparison to human eye properties
  23. Paper No 14.1: Imaging Colorimeter for Color Calibration of Phone and Tablet Displays
  24. Paper No 14.3: Ultra-Large Field of View and High-Magnification Imaging Video Colorimeter
  25. P.44: Display Aspect Simulation using Measured Emissive and Reflective Display Imperfections
  26. Optical characterization of different types of 3D displays
  27. Full optical characterization of auto-stereoscopic 3D displays using local viewing angle and imaging measurements
  28. Optical characterization of 3D displays
  29. Color display evaluationvs. viewing angle usingL*a*b* color space and Fourier-optics measurements
  30. 70.3: Precise Evaluation of the Colorimetric Properties of Displays Versus Viewing Angle using Fourier Optics
  31. 14.3: Grey Level Crosstalk and Temporal Synchronization of Different Shutter Glass 3D TVs
  32. Characterization of one time‐sequential stereoscopic 3d display ‐ Part I: Temporal analysis ‐
  33. Characterization of one time‐sequential stereoscopic 3d display ‐ Part II: Quick characterization using homogeneity measurements ‐
  34. Imaging polarization for characterization of polarization based stereoscopic 3D displays
  35. Multispectral polarization viewing angle analysis of circular polarized stereoscopic 3D displays
  36. 23.1: Viewing Angle and Imaging Polarization Analysis of Polarization Based Stereoscopic 3D Displays
  37. 17.4: Comprehensive Survey on Viewing Angle Measurement Devices: A Theoretical Study
  38. 11.2: Distinguished Paper: VCMaster3D: A New Fourier Optics Viewing Angle Instrument for Characterization of Autostereoscopic 3D Displays.
  39. P-68: High-Visibility 2D/3D LCD with HDDP Arrangement and Its Evaluation Results Using Fourier Optics Instrument
  40. P-89: New Multispectral Fourier Optics Viewing Angle Instrument for Full Characterization of LCDs and their Components
  41. 26.4: Relationship between LCD Response Time and MPRT
  42. Robust sub-50-nm CD control by a fast-goniometric scatterometry technique
  43. Angle of view polarization characterization of liquid crystal displays and their components
  44. P-74: Calibration of a Fourier-Optics based Measurement System
  45. P-81: Image Sticking Cartography on PDP TV: A New Quantitative Measurement
  46. Rapid photo-goniometric technique for LED emission characterization
  47. Light-scattered measurements using Fourier optics: a new tool for surface characterization
  48. Innovative rapid photogoniometry method for CD metrology
  49. A new analysis strategy for CD metrology using rapid photo goniometry method
  50. P-58: Imaging Polarization Interferometer for Flat Panel Display Characterization
  51. The French R&D program on EUV lithography : PREUVE
  52. High-k dielectric characterization by VUV spectroscopic ellipsometry and X-ray reflection
  53. New infrared spectroscopic ellipsometer for low-k dielectric characterization
  54. Precise and accurate characterization of DUV and V-UV phase shifting mask materials by combined V-UV spectroscopic ellipsometry and x-ray reflectometry
  55. Characterization of optics and masks for the EUV lithography
  56. Characterization of ultrathin gate dielectrics by grazing X-ray reflectance and VUV spectroscopic ellipsometry on the same instrument
  57. Characterization of CNx films deposited by pulsed laser ablation using spectroscopic ellipsometry
  58. Combined metrology including VUV spectroscopic ellipsometer and grazing x-ray reflectance for precise characterization of thin films and multilayers at 157 nm
  59. IR spectroscopic ellipsometry for industrial characterization of semiconductors
  60. Feasibility and applicability of integrated metrology using spectroscopic ellipsometry in a cluster tool
  61. Phase-shifting interference microscope for the characterization of metallic interconnections of flat panel displays
  62. Combined metrology including VUV spectroscopic ellipsometry and grazing x-ray reflectance for precise characterization of thin films and multilayers at 157 nm
  63. New instrument to characterize materials and optics for 157-nm lithography
  64. Characterization of ultrathin gate dielectrics using combined grazing x-ray reflectance and spectroscopic ellipsometry
  65. New purged UV spectroscopic ellipsometer to characterize thin films and multilayers at 157 nm
  66. Feasibility and applicability of integrated metrology using spectroscopic ellipsometry in a cluster tool
  67. New purged UV spectroscopic ellipsometer to characterize thin films and multilayers at 157 nm
  68. Precise Characterization of Resists and Thin Gate Dielectrics in the VUV Range for 157nm Lithography
  69. SOPRA SE300: a new tool for high accuracy characterization of multilayer structures
  70. High-accuracy characterization of antireflective coatings and photoresists by spectroscopic ellipsometry: a new tool for 300-mm wafer technology
  71. New method for determination of the photoresist Dill parameters using spectroscopic ellipsometry
  72. New versatile system for characterization of antireflective coatings using combined spectroscopic ellipsometry and grazing x-ray reflectance
  73. New method for determination of the photoresist Dill parameters using spectroscopic ellipsometry
  74. High-accuracy characterization of antireflective coatings and photoresists by spectroscopic ellipsometry: a new tool for 300-mm-wafer technology
  75. Precise characterization of ultrathin nitride/oxide gate dielectrics by grazing x-ray reflectance and spectroscopic ellipsometry
  76. A New Purged UV Spectroscopic Ellipsometer to characterize 157nm nanolithographic materials
  77. A new process to manufacture thin SiGe and SiGeC epitaxial films on silicon by ion implantation and excimer laser annealing
  78. New process for manufacturing thin SiGe and SiGeC epitaxial films on silicon by ion implantation and excimer laser annealing
  79. Real-time spectroscopic reflectometer for end-point detection on multichamber deposition processes
  80. SOPRA SE3000: a new tool for high-accuracy characterization of multilayer structures on very small spot size
  81. Growth of pseudomorphic Si1−yCy and Si1−x−yGexCy alloy layers on < 100 > Si by ion implantation and pulsed excimer laser induced epitaxy
  82. Atomic scale characterization of semiconductors by in-situ real time spectroscopic ellipsometry
  83. Combined characterization of conductive materials by infrared spectroscopic ellipsometry and grazing X-ray reflectance
  84. Ti/TiN multilayers for hard coatings applications: in-situ characterization by real time spectroscopic ellipsometry
  85. Precise measurement of ARC optical indices in the deep-UV range by variable-angle spectroscopic ellipsometry
  86. Growth of Si1-yCy/Si and Si1-x-yGexCy/Si heterostructures by ion implantation and pulsed excimer laser-induced epitaxy
  87. Fine characterization of ITO layers by spectroscopic ellipsometry
  88. Single-shot excimer laser annealing of PECVD amorphous silicon
  89. Characterization of laser-annealed polysilicon by spectroscopic ellipsometry and comparison to other techniques
  90. Characterization of resists and antireflective coatings by spectroscopic ellipsometry in the UV and deep-UV range
  91. Single shot excimer laser annealing of amorphous silicon for AMLCD
  92. In situ spectroscopic ellipsometry: present status and future needs for thin film characterisation and process control
  93. Single shot excimer laser annealing of amorphous silicon for AMLCD
  94. In situ spectroscopic ellipsometry: present status and future needs for thin film characterisation and process control
  95. Spectroscopic ellipsometry for Si(1 − x)Gex characterization: comparison with other experimental techniques
  96. Spectroscopic ellipsometry applied to the determination of an ion implantation depth profile
  97. In-situ Real Time Spectroscopic Ellipsometry Applied to the Surface Monitoring of Semiconductors
  98. Spectroscopic ellipsometry for Si(1 − x)Gex characterization: comparison with other experimental techniques
  99. Magnetic and magneto-optical properties of Tb/Fe multilayers
  100. Tb/Fe multilayers: A study by conversion electron Mössbauer spectrometry and polar Kerr effect
  101. Ni/C and Rh/C multilayers for soft x-ray optics: influence of the deposition conditions on the nanostructure
  102. Fabrication and performance of linear multilayer gratings in the 44-130 angstrom wavelength range
  103. Tb/Fe multilayered films studied by conversion electron Mössbauer spectrometry and Kerr effect
  104. rf-sputtered Fe/Ge multilayers for neutron-polarizing monochromators
  105. Low d-spacing titanium-based multilayers for neutrons
  106. Anisotropic differential magnetoresistance of Cu/Co(100) multilayers
  107. Enhanced differential magnetoresistance of Cu/Co (100) multilayers
  108. Magneto-optical properties of diode rf-sputtered Tb/Fe multilayers: influence of the stack parameters.
  109. Magnesium-silicide-based multilayers for soft x-ray optics
  110. Tungsten/boron nitride multilayers for XUV optical applications
  111. Structural characteristics and performances of rf-sputtered Mo/Si and Co/Si multilayers for soft x-ray optics
  112. Experimental study of Fe/C multilayer performance: effects of substrate quality and of x-ray irradiation
  113. Structural and magneto‐optical properties of Tb/Fe and (Tb/Fe)/Si3N4multilayers
  114. Magnetic and structural properties of rf‐sputtered Co/Fe and Co/Cr multilayers
  115. Silicon/silicon oxide and silicon/silicon nitride multilayers for XUV optical applications
  116. Soft magnetic properties of Fe/FeN multilayer films prepared by reactive diode rf sputtering
  117. Comparative study of carbon and boron carbide spacing layers inside soft x-ray mirrors
  118. Three materials soft x-ray mirrors: theory and application
  119. Silicon/silicon oxide and silicon/silicon nitride multilayers for extreme ultraviolet
  120. Grazing x‐ray reflection analysis of nanometric scale structures
  121. Manufacture and performances of rhodium/carbon multilayer x‐ray mirrors
  122. Radio frequency sputtering of tungsten/tungsten nitride multilayers on GaAs
  123. Silicon nitride films prepared using a SiH4/NH3microwave multipolar plasma
  124. Interface analysis of sputtered W-C, Rh-C and Ni-C multilayers for soft X-ray applications
  125. Diode r.f. sputtering of copper and copper oxide thin films and multilayers
  126. Hydrogen and oxygen content of silicon nitride films prepared by multipolar plasma‐enhanced chemical vapor deposition
  127. Influence of the Surface Layer Defects on the Conduction Mechanism in Semi-Insulating Gallium Arsenide
  128. Metastable to Stable EL2 Regeneration via an 'Auger' Mechanism Induced by the Debye Tail
  129. Physical parameters of GaInAs/Si3N4interface states obtained by the conductance method
  130. Interactions between bombardment‐induced defects in GaAs
  131. Electron Hopping between Bombardment Induced Defects in Gallium Arsenide
  132. ChemInform Abstract: Neue Phase für das Bleimonoxid α-PbO bei tiefer Temperatur.
  133. Characterization of III-V periodic structures by spectroscopic ellipsometry and grazing X-ray reflectance