All Stories

  1. Photoluminescence characterization of interlayer carrier injection from InGaAs quantum well to InGaAs surface quantum dots with respect to GaAs spacer thickness

    Article • Applied Surface Science, November 2023, Elsevier

    Morgan Ware

  2. Temperature dependent correlation of Hall effect and optical measurements of electron concentration in degenerate InN thin film

    Article • Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena, August 2023, American Vacuum Society

    Morgan Ware

  3. Temperature dependent behavior of sub-monolayer quantum dot based solar cell

    Article • Solar Energy Materials and Solar Cells, August 2023, Elsevier

    Morgan Ware

  4. Photoconductivity of GeSn thin films with up to 15% Sn content

    Article • Physical Review Materials, July 2023, American Physical Society (APS)

    Morgan Ware

  5. Controlling the size and density of InN quantum dots formed on sapphire substrate by droplet epitaxy

    Article • Journal of Vacuum Science & Technology A Vacuum Surfaces and Films, June 2023, American Vacuum Society

    Morgan Ware

  6. Electron Accumulation Tuning by Surface-to-Volume Scaling of Nanostructured InN Grown on GaN(001) for Narrow-Bandgap Optoelectronics

    Article • ACS Applied Nano Materials, April 2023, American Chemical Society (ACS)

    Morgan Ware

  7. Complex exciton dynamics with elevated temperature in a GaAsSb/GaAs quantum well heterostructure

    Article • Applied Physics Letters, April 2023, American Institute of Physics

    Professor Yuriy I Mazur, Morgan Ware

  8. SUPERCONDUCTIVITY IN THE QUATERNARY INTERMETALLIC COMPOUND YNI2-XTXB2C

    Article • EPH - International Journal of Science And Engineering, March 2023, Green Publication

    Morgan Ware

  9. Investigating self-assembled strain-free growth of In droplets on GaN using droplet epitaxy

    Article • March 2023, SPIE

    Morgan Ware

  10. Surface Atomic Arrangement of Aluminum Ultra-Thin Layers Grown on Si(111)

    Article • Nanomaterials, March 2023, MDPI AG

    Professor Carlos Jose Tavares, Morgan Ware

  11. Low resistance Ohmic contacts to graded InGaN

    Article • Materials Science in Semiconductor Processing, January 2023, Elsevier

    Morgan Ware

  12. Study of the type-I to type-II band alignment transition in InAs(Sb)/GaAs quantum dot nanostructures

    Article • Optical Materials, December 2022, Elsevier

    Morgan Ware

  13. Modeling of temperature dependence of Λ-graded InGaN solar cells for both strained and relaxed features

    Article • Frontiers in Materials, October 2022, Frontiers

    Morgan Ware

  14. Band Offsets of the MOCVD-Grown β-(Al0.21Ga0.79)2O3/β-Ga2O3 (010) Heterojunction

    Article • ACS Applied Materials & Interfaces, July 2022, American Chemical Society (ACS)

    Morgan Ware

  15. Study of simulations of double graded InGaN solar cell structures

    Article • Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena, June 2022, American Vacuum Society

    Morgan Ware

  16. Photoluminescence study of exciton localization in InGaAs bulk and InGaAs/InAlAs wide quantum well on InP (001) substrate

    Article • Journal of Luminescence, June 2022, Elsevier

    Morgan Ware

  17. Modeling of Λ-graded InxGa1−xN solar cells: comparison of strained and relaxed features

    Article • Journal of Photonics for Energy, April 2022, SPIE

    Morgan Ware

  18. Investigating the linear and nonlinear optical properties of Al alloyed Ni nanofilms in the cw regime

    Article • Nano-Structures & Nano-Objects, April 2022, Elsevier

    Morgan Ware

  19. Type-II characteristics of photoluminescence from InGaAs/GaAs surface quantum dots due to Fermi level pinning effect

    Article • Applied Surface Science, March 2022, Elsevier

    Morgan Ware

  20. Carrier Injection to In0.4Ga0.6As/GaAs Surface Quantum Dots in Coupled Hybrid Nanostructures

    Article • Crystals, February 2022, MDPI AG

    Morgan Ware

  21. Investigation of linear and nonlinear optical properties of amorphous carbon nanofilms prepared by electron beam evaporation

    Article • Applied Surface Science, February 2022, Elsevier

    Morgan Ware

  22. Experiment-simulation comparison of luminescence properties of GaN/InGaN/GaN double graded structures

    Article • Journal of Luminescence, December 2021, Elsevier

    Morgan Ware

  23. The nonlinear optical properties of nickel nano-films in the cw regime: Proposed model

    Article • Optical Materials, November 2021, Elsevier

    Morgan Ware

  24. Coherent-interface-induced strain in large lattice-mismatched materials: A new approach for modeling Raman shift

    Article • Nano Research, September 2021, Tsinghua University Press

    Morgan Ware

  25. Effects of numbers of wells on optical properties of periodic InGaN graded structure

    Article • August 2021, SPIE

    Morgan Ware

  26. InAs nanostructures for solar cell: Improved efficiency by submonolayer quantum dot

    Article • Solar Energy Materials and Solar Cells, June 2021, Elsevier

    Morgan Ware

  27. Energy band engineering toward hardened electronics in ionizing radiation environments via quantum gettering

    Article • Journal of Applied Physics, February 2021, American Institute of Physics

    Morgan Ware

  28. Growth kinetics and nanoscale structure-property relationships of InN nanostructures on GaN(0 0 0 1)

    Article • Applied Surface Science, January 2021, Elsevier

    Morgan Ware

  29. Design of a remote plasma-enhanced chemical vapor deposition system for growth of tin containing group-IV alloys

    Article • Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena, November 2020, American Vacuum Society

    Morgan Ware

  30. Photoluminescence of InAs/GaAs quantum dots under direct two-photon excitation

    Article • Scientific Reports, July 2020, Springer Science + Business Media

    Morgan Ware

  31. Thermally-induced nonlinear optical properties of silver nano-films near surface plasmon resonance

    Article • Optical Materials, July 2020, Elsevier

    Morgan Ware

  32. Photoluminescence characterization of wetting layer and carrier dynamics for coupled InGaAs/GaAs surface quantum dot pair structures

    Article • Optics Express, June 2020, Optical Society of America (OSA)

    Morgan Ware

  33. Type-II GaSb quantum dots grown on InAlAs/InP (001) by droplet epitaxy

    Article • Nanotechnology, May 2020, Institute of Physics Publishing

    Morgan Ware

  34. Effect of indium accumulation on the growth and properties of ultrathin In(Ga)N/GaN quantum wells

    Article • Materials & Design, May 2020, Elsevier

    Morgan Ware

  35. Au–Ag–Al Nano‐Alloy Thin Films as an Advanced Material for Photonic Applications: XPS Analysis, Linear and Nonlinear Optical Properties Under CW Regime

    Article • Crystal Research and Technology, April 2020, Wiley

    Morgan Ware

  36. Process for Growth of Group-IV Alloys Containing Tin by Remote Plasma Enhanced Chemical Vapor Deposition

    Article • Frontiers in Materials, March 2020, Frontiers

    Morgan Ware

  37. Luminescence Properties of GaN/InxGa1−xN/InyGa1−yN Double Graded Structures (Zigzag Quantum Wells)

    Article • Journal of Electronic Materials, March 2020, Springer Science + Business Media

    Morgan Ware

  38. Investigation of the Structural and Optical Properties of Compositionally V‐Graded Strained InxGa1–xN Layers

    Article • physica status solidi (b), February 2020, Wiley

    Morgan Ware

  39. Lateral carrier transfer for high density InGaAs/GaAs surface quantum dots

    Article • Journal of Luminescence, February 2020, Elsevier

    Morgan Ware

  40. Self‐Assembled InAs/GaAs Coupled Quantum Dots for Photonic Quantum Technologies

    Article • Advanced Quantum Technologies, December 2019, Wiley

    Morgan Ware

  41. Comparative study of photoluminescence for type-I InAs/GaAs0.89Sb0.11 and type-II InAs/GaAs0.85Sb0.15 quantum dots

    Article • Optical Materials, December 2019, Elsevier

    Morgan Ware

  42. Magnetically controlled exciton transfer in hybrid quantum-dot–quantum-well nanostructures

    Article • July 2019, American Physical Society (APS)

    Morgan Ware

  43. Plasmonic emission of hybrid Au/Ag bullseye nanostructures

    Article • Materials Letters, July 2019, Elsevier

    Morgan Ware

  44. Excitation intensity and thickness dependent emission mechanism from an ultrathin InAs layer in GaAs matrix

    Article • Journal of Applied Physics, December 2018, American Institute of Physics

    Professor Yuriy I Mazur, Morgan Ware

  45. Local Strain and Crystalline Defects in GaN/AlGaN/GaN(0001) Heterostructures Induced by Compositionally Graded AlGaN Buried Layers

    Article • Crystal Growth & Design, December 2018, American Chemical Society (ACS)

    Morgan Ware

  46. Interplay Effect of Temperature and Excitation Intensity on the Photoluminescence Characteristics of InGaAs/GaAs Surface Quantum Dots

    Article • Nanoscale Research Letters, November 2018, Springer Science + Business Media

    Morgan Ware

  47. Carrier dynamics in hybrid nanostructure with electronic coupling from an InGaAs quantum well to InAs quantum dots

    Article • Journal of Luminescence, October 2018, Elsevier

    Morgan Ware

  48. Ellipsometric study of aluminum-nickel nano-films for plasmonic application

    Article • September 2018, SPIE

    Morgan Ware

  49. Correlation between photoluminescence and morphology for single layer self-assembled InGaAs/GaAs quantum dots

    Article • Optics Express, August 2018, Optical Society of America (OSA)

    Morgan Ware

  50. High temperature capacitors using AlN grown by MBE as the dielectric

    Article • Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena, June 2018, American Vacuum Society

    Morgan Ware

  51. Kinetically controlled indium surface coverage effects on PAMBE-growth of InN/GaN(0001) quantum well structures

    Article • Journal of Applied Physics, May 2018, American Institute of Physics

    Morgan Ware

  52. AlGaN/GaN Micro-Hall Effect Devices for Simultaneous Current and Temperature Measurements From Line Currents

    Article • IEEE Sensors Journal, April 2018, Institute of Electrical & Electronics Engineers (IEEE)

    Morgan Ware

  53. Abnormal photoluminescence for GaAs/Al0.2Ga0.8As quantum dot-ring hybrid nanostructure grown by droplet epitaxy

    Article • Journal of Luminescence, March 2018, Elsevier

    Morgan Ware

  54. Polarization Effects in Graded AlGaN Nanolayers Revealed by Current-Sensing and Kelvin Probe Microscopy

    Article • ACS Applied Materials & Interfaces, February 2018, American Chemical Society (ACS)

    Morgan Ware

  55. Kinetically controlled transition from 2D nanostructured films to 3D multifaceted InN nanocrystals on GaN(0001)

    Article • CrystEngComm, January 2018, Royal Society of Chemistry

    Morgan Ware

  56. Carrier dynamics of InAs quantum dots with GaAs1−xSbx barrier layers

    Article • Applied Physics Letters, November 2017, American Institute of Physics

    Morgan Ware

  57. Optical and structural study of deformation states in the GaN/AlN superlattices

    Article • Journal of Applied Physics, October 2017, American Institute of Physics

    Morgan Ware

  58. Erratum to: Infrared Reflectance Analysis of Epitaxial n-Type Doped GaN Layers Grown on Sapphire

    Article • Nanoscale Research Letters, August 2017, Springer Science + Business Media

    Morgan Ware

  59. Luminescent properties of GaAsBi/GaAs double quantum well heterostructures

    Article • Journal of Luminescence, August 2017, Elsevier

    Morgan Ware

  60. A Highly Linear Temperature Sensor Using GaN-on-SiC Heterojunction Diode for High Power Applications

    Article • IEEE Electron Device Letters, August 2017, Institute of Electrical & Electronics Engineers (IEEE)

    Morgan Ware

  61. Optical characterization of type-I to type-II band alignment transition in GaAs/AlxGa1−xAs quantum rings grown by droplet epitaxy

    Article • Journal of Physics D Applied Physics, July 2017, Institute of Physics Publishing

    Morgan Ware

  62. Infrared Reflectance Analysis of Epitaxial n-Type Doped GaN Layers Grown on Sapphire

    Article • Nanoscale Research Letters, June 2017, Springer Science + Business Media

    Morgan Ware

  63. Optical characteristics of InAlAs/GaAlAs/GaAs quantum dots (Conference Presentation)

    Article • April 2017, SPIE

    Morgan Ware

  64. Photoluminescence Study of the Interface Fluctuation Effect for InGaAs/InAlAs/InP Single Quantum Well with Different Thickness

    Article • Nanoscale Research Letters, March 2017, Springer Science + Business Media

    Morgan Ware

  65. Photoluminescence of low density InAs/GaAs quantum dots with different bimodal populations

    Article • Micro & Nano Letters, March 2017, the Institution of Engineering and Technology (the IET)

    Professor Yuriy I Mazur, Morgan Ware

  66. Influence of built-in charge on photogeneration and recombination processes in InAs/GaAs quantum dot solar cells

    Article • Journal of Physics D Applied Physics, March 2017, Institute of Physics Publishing

    Morgan Ware

  67. Effects of Gold Nanorods on Nonlinear Properties of Graphene Films Using Z-Scan Technique

    Article • Journal of Physical Science and Application, February 2017, David Publishing Company

    Morgan Ware

  68. Temperature dependence of quantum-wire intermediate-band solar cells

    Article • February 2017, SPIE

    Morgan Ware

  69. Investigation of electrically active defects in InGaAs quantum wire intermediate-band solar cells using deep-level transient spectroscopy technique

    Article • Nanotechnology, December 2016, Institute of Physics Publishing

    Morgan Ware

  70. Interplay Effect of Excitation and Temperature on Carrier Transfer between Vertically Aligned InAs/GaAs Quantum Dot Pairs

    Article • Crystals, November 2016, MDPI AG

    Morgan Ware

  71. Highly linear temperature sensor using GaN-on-SiC heterojunction diode for Harsh environment applications

    Article • November 2016, Institute of Electrical & Electronics Engineers (IEEE)

    Morgan Ware

  72. The continuum state in photoluminescence of type-II In0.46Al0.54As/Al0.54Ga0.46As quantum dots

    Article • Applied Physics Letters, October 2016, American Institute of Physics

    Morgan Ware

  73. Comparative study of photoluminescence from In0.3Ga0.7As/GaAs surface and buried quantum dots

    Article • Nanotechnology, October 2016, Institute of Physics Publishing

    Morgan Ware

  74. Formation of self-assembled Ga-rich droplet chains on GaAs (100) patterned by focused ion beam

    Article • Applied Physics Letters, September 2016, American Institute of Physics

    Morgan Ware

  75. Surface effects of vapour-liquid-solid driven Bi surface droplets formed during molecular-beam-epitaxy of GaAsBi

    Article • Scientific Reports, July 2016, Springer Science + Business Media

    Morgan Ware

  76. Optical Properties of a Quantum Dot-Ring System Grown Using Droplet Epitaxy

    Article • Nanoscale Research Letters, June 2016, Springer Science + Business Media

    Morgan Ware

  77. The Peculiarities of Strain Relaxation in GaN/AlN Superlattices Grown on Vicinal GaN (0001) Substrate: Comparative XRD and AFM Study

    Article • Nanoscale Research Letters, May 2016, Springer Science + Business Media

    Morgan Ware

  78. Intensity-dependent nonlinearity of the lateral photoconductivity in InGaAs/GaAs dot-chain structures

    Article • Journal of Applied Physics, May 2016, American Institute of Physics

    Morgan Ware

  79. X-ray Reciprocal Space Mapping of Graded Al x Ga1 − x N Films and Nanowires

    Article • Nanoscale Research Letters, February 2016, Springer Science + Business Media

    Morgan Ware

  80. Precise Manipulations with Asymmetric Nano-Objects Viscoelastically Bound to a Surface

    Article • Journal of Nano Research, February 2016, Trans Tech Publications

    Professor Yuriy I Mazur, Morgan Ware

  81. Effect of strain-polarization fields on optical transitions in AlGaN/GaN multi-quantum well structures

    Article • Physica E Low-dimensional Systems and Nanostructures, February 2016, Elsevier

    Morgan Ware

  82. Defect-Free Self-Catalyzed GaAs/GaAsP Nanowire Quantum Dots Grown on Silicon Substrate

    Article • Nano Letters, December 2015, American Chemical Society (ACS)

    Morgan Ware

  83. Coexistence of type-I and type-II band alignments in In0.46Al0.54As/Ga0.46Al0.54As self-assembled quantum dots

    Article • Applied Physics Letters, November 2015, American Institute of Physics

    Morgan Ware

  84. Nanoscale Electrostructural Characterization of Compositionally Graded AlxGa1–xN Heterostructures on GaN/Sapphire (0001) Substrate

    Article • ACS Applied Materials & Interfaces, October 2015, American Chemical Society (ACS)

    Morgan Ware

  85. Generation-recombination processes in InGaAs/GaAs heterostructures with one-dimensional nanostructures

    Article • June 2015, SPIE

    Morgan Ware

  86. Ordering of InGaAs Quantum Dots Grown by Molecular Beam Epitaxy under As2 gas flux

    Article • MRS Proceedings, January 2015, Springer Science + Business Media

    Morgan Ware

  87. Measuring the depth profiles of strain/composition in AlGaN-graded layer by high-resolution x-ray diffraction

    Article • Journal of Applied Physics, December 2014, American Institute of Physics

    Morgan Ware

  88. Deep level centers and their role in photoconductivity transients of InGaAs/GaAs quantum dot chains

    Article • Journal of Applied Physics, November 2014, American Institute of Physics

    Morgan Ware

  89. Band filling effects on temperature performance of intermediate band quantum wire solar cells

    Article • Journal of Applied Physics, August 2014, American Institute of Physics

    Morgan Ware

  90. Tensile GaAs(111) quantum dashes with tunable luminescence below the bulk bandgap

    Article • Applied Physics Letters, August 2014, American Institute of Physics

    Morgan Ware

  91. Excitation intensity dependence of lateral photocurrent in InGaAs/GaAs dot-chain structures

    Article • Physics Letters A, July 2014, Elsevier

    Morgan Ware

  92. Temperature driven three-dimensional ordering of InGaAs/GaAs quantum dot superlattices grown under As2 gas flux

    Article • Applied Surface Science, June 2014, Elsevier

    Morgan Ware

  93. Mechanism of strain-influenced quantum well thickness reduction in GaN/AlN short-period superlattices

    Article • Nanotechnology, May 2014, Institute of Physics Publishing

    Morgan Ware

  94. Photo-voltage in InGaAs/GaAs heterostructures with one-dimensional nanostructures

    Article • May 2014, SPIE

    Morgan Ware

  95. Low temperature magneto-photoluminescence of GaAsBi /GaAs quantum well heterostructures

    Article • Journal of Applied Physics, March 2014, American Institute of Physics

    Morgan Ware

  96. Spatial distribution of free carrier concentration in vertical GaN Gunn‐diode structures studied by confocal micro‐Raman spectroscopy and Kelvin probe force microscopy

    Article • physica status solidi c, January 2014, Wiley

    Morgan Ware

  97. Effects of AlGaAs cladding layers on the luminescence of GaAs/GaAs1−xBix/GaAs heterostructures

    Article • Nanotechnology, December 2013, Institute of Physics Publishing

    Morgan Ware

  98. Mechanism of current flow and temperature dependence of contact resistivity in Au-Pd-Ti-Pd-n+-GaN ohmic contacts

    Article • Semiconductor Physics Quantum Electronics & Optoelectronics, December 2013, Co. Ltd. Ukrinformnauka

    Morgan Ware

  99. Depth profiling of strain and carrier concentration by cleaved surface scanning of GaN Gunn-diode: confocal Raman microscopy

    Article • Semiconductor Science and Technology, August 2013, Institute of Physics Publishing

    Morgan Ware

  100. High performance quantum well micro-hall device for current sensing in inverters

    Article • July 2013, Institute of Electrical & Electronics Engineers (IEEE)

    Morgan Ware

  101. Electron transport in quantum dot chains: Dimensionality effects and hopping conductance

    Article • Journal of Applied Physics, May 2013, American Institute of Physics

    Morgan Ware

  102. Effect of resonant tunneling on exciton dynamics in coupled dot-well nanostructures

    Article • Journal of Applied Physics, April 2013, American Institute of Physics

    Morgan Ware

  103. Strong excitation intensity dependence of the photoluminescence line shape in GaAs1−xBix single quantum well samples

    Article • Journal of Applied Physics, April 2013, American Institute of Physics

    Morgan Ware

  104. Erratum: “Polarization induced pn-junction without dopant in graded AlGaN coherently strained on GaN” [Appl. Phys. Lett. 101, 122103 (2012)]

    Article • Applied Physics Letters, March 2013, American Institute of Physics

    Morgan Ware

  105. Site-controlled formation of InGaAs quantum nanostructures-Tailoring the dimensionality and the quantum confinement

    Article • Nano Research, February 2013, Springer Science + Business Media

    Morgan Ware

  106. Effect of tunneling transfer on thermal redistribution of carriers in hybrid dot-well nanostructures

    Article • Journal of Applied Physics, January 2013, American Institute of Physics

    Morgan Ware

  107. Effects of spatial confinement and layer disorder in photoluminescence of GaAs1−xBix/GaAs heterostructures

    Article • Journal of Physics D Applied Physics, January 2013, Institute of Physics Publishing

    Morgan Ware

  108. Effect of dimensionality and morphology on polarized photoluminescence in quantum dot-chain structures

    Article • Journal of Applied Physics, October 2012, American Institute of Physics

    Morgan Ware

  109. Polarization induced pn-junction without dopant in graded AlGaN coherently strained on GaN

    Article • Applied Physics Letters, September 2012, American Institute of Physics

    Morgan Ware

  110. Polarization doping: Reservoir effects of the substrate in AlGaN graded layers

    Article • Journal of Applied Physics, September 2012, American Institute of Physics

    Morgan Ware

  111. Photoconductivity peculiarities in InGaAs quantum wire heterostructures: anisotropy and high photoresponsivity at room temperature

    Article • Semiconductor Science and Technology, August 2012, Institute of Physics Publishing

    Morgan Ware

  112. InGaAs quantum wire intermediate band solar cell

    Article • Applied Physics Letters, July 2012, American Institute of Physics

    Morgan Ware

  113. Substrate effects on the strain relaxation in GaN/AlN short-period superlattices

    Article • Nanoscale Research Letters, June 2012, Springer Science + Business Media

    Morgan Ware

  114. State filling dependent luminescence in hybrid tunnel coupled dot–well structures

    Article • Nanoscale, January 2012, Royal Society of Chemistry

    Morgan Ware

  115. Isotropic Hall effect and “freeze-in” of carriers in the InGaAs self-assembled quantum wires

    Article • Journal of Applied Physics, October 2011, American Institute of Physics

    Morgan Ware

  116. Confocal Raman depth-scanning spectroscopic study of phonon−plasmon modes in GaN epilayers

    Article • Journal of Applied Physics, June 2011, American Institute of Physics

    Morgan Ware

  117. Confocal Raman depth‐profile analysis of the electrical and structural properties in III‐nitride structures

    Article • physica status solidi c, June 2011, Wiley

    Morgan Ware

  118. Polarization induced doping in graded AlGaN films

    Article • physica status solidi c, June 2011, Wiley

    Morgan Ware

  119. Interface roughness scattering in laterally coupled InGaAs quantum wires

    Article • Applied Physics Letters, December 2010, American Institute of Physics

    Morgan Ware

  120. Influence of template type and buffer strain on structural properties of GaN multilayer quantum wells grown by PAMBE, an x-ray study

    Article • Journal of Physics D Applied Physics, December 2010, Institute of Physics Publishing

    Morgan Ware

  121. Tunneling-barrier controlled excitation transfer in hybrid quantum dot-quantum well nanostructures

    Article • Journal of Applied Physics, October 2010, American Institute of Physics

    Morgan Ware

  122. Fabrication of regular arrays of gold nanospheres by thermal transformation of electroless-plated films

    Article • Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena, May 2010, American Vacuum Society

    Morgan Ware

  123. Morphology of strained and relaxed SiGe layers grown on high-index Si substrates

    Article • Thin Solid Films, February 2010, Elsevier

    Morgan Ware

  124. Tuning the emission profiles of various self-assembled InxGa1−xAs nanostructures by rapid thermal annealing

    Article • Journal of Applied Physics, October 2009, American Institute of Physics

    Morgan Ware

  125. Hybridized quantum dot-wetting layer states in photoluminescence of In(Ga)As/GaAs dot chain samples

    Article • Journal of Applied Physics, June 2009, American Institute of Physics

    Morgan Ware

  126. Engineering of 3D self-directed quantum dot ordering in multilayer InGaAs/GaAs nanostructures by means of flux gas composition

    Article • Nanotechnology, November 2008, Institute of Physics Publishing

    Morgan Ware

  127. Deep traps in GaAs/InGaAs quantum wells and quantum dots, studied by noise spectroscopy

    Article • Journal of Applied Physics, November 2008, American Institute of Physics

    Morgan Ware

  128. Thermal peculiarity of AlAs-capped InAs quantum dots in a GaAs matrix

    Article • Journal of Applied Physics, November 2008, American Institute of Physics

    Morgan Ware

  129. Spectroscopic observation of developing InAs quantum dots on GaAs ringlike-nanostructured templates

    Article • Journal of Applied Physics, August 2008, American Institute of Physics

    Morgan Ware

  130. Super Low Density InGaAs Semiconductor Ring-Shaped Nanostructures

    Article • Crystal Growth & Design, May 2008, American Chemical Society (ACS)

    Morgan Ware

  131. Characteristics of Lateral Transport in In0.35Ga0.65As/GaAs Quantum Dot Heterostructures with Variation of Size, Shape and Density of Quantum Dots

    Article • January 2008, Springer Science + Business Media

    Morgan Ware

  132. Tuning the optical performance of surface quantum dots in InGaAs/GaAs hybrid structures

    Article • Optics Express, January 2007, Optical Society of America (OSA)

    Morgan Ware

  133. Spin interactions in InAs quantum dots and molecules

    Article • physica status solidi (b), November 2006, Wiley

    Morgan Ware

  134. Theory of spin states in coupled quantum dots

    Article • physica status solidi (b), November 2006, Wiley

    Morgan Ware

  135. Near-infrared wavelength intersubband transitions in GaN∕AlN short period superlattices

    Article • Applied Physics Letters, October 2006, American Institute of Physics

    Morgan Ware

  136. Optical Signatures of Coupled Quantum Dots

    Article • Science, February 2006, American Association for the Advancement of Science

    Morgan Ware

  137. Polarized Fine Structure in the Photoluminescence Excitation Spectrum of a Negatively Charged Quantum Dot

    Article • Physical Review Letters, October 2005, American Physical Society (APS)

    Morgan Ware

  138. Binding energies of positive and negative trions: From quantum wells to quantum dots

    Article • Physical Review B, July 2005, American Physical Society (APS)

    Morgan Ware

  139. Self-organized nanoscale Ge dots and dashes on SiGe/Si superlattices

    Article • Journal of Applied Physics, July 2005, American Institute of Physics

    Morgan Ware

  140. Electrical spin pumping of quantum dots at room temperature

    Article • Applied Physics Letters, March 2005, American Institute of Physics

    Morgan Ware

  141. Optical Pumping of the Electronic and Nuclear Spin of Single Charge-Tunable Quantum Dots

    Article • Physical Review Letters, February 2005, American Physical Society (APS)

    Morgan Ware

  142. Polarization spectroscopy of positive and negative trions in an InAs quantum dot

    Article • Physica E Low-dimensional Systems and Nanostructures, February 2005, Elsevier

    Morgan Ware

  143. Suppression of Dyakonov-Perel Spin Relaxation in High-Mobilityn-GaAs

    Article • Physical Review Letters, November 2004, American Physical Society (APS)

    Morgan Ware

  144. Analysis of a nonorthogonal pattern of misfit dislocation arrays in SiGe epitaxy on high-index Si substrates

    Article • Journal of Applied Physics, December 2003, American Institute of Physics

    Morgan Ware

  145. Wavelength-dependent Raman scattering of hydrogenated amorphous silicon carbon with red, green, and blue light excitation

    Article • Journal of Materials Research, April 2003, Springer Science + Business Media

    Morgan Ware

  146. Polarization Spectroscopy of Charged Single Self-Assembled Quantum Dots

    Article • MRS Proceedings, January 2003, Springer Science + Business Media

    Morgan Ware

  147. Polarization Spectroscopy of Charged Single Self-Assembled Quantum Dots

    Article • MRS Proceedings, January 2003, Springer Science + Business Media

    Morgan Ware

  148. Polarization Spectroscopy of Charged Single Self-Assembled Quantum Dots

    Article • MRS Proceedings, January 2003, Springer Science + Business Media

    Morgan Ware

  149. Selective bond breaking in amorphous hydrogenated silicon by using Duke FEL

    Article • Nuclear Instruments and Methods in Physics Research Section A Accelerators Spectrometers Detectors and Associated Equipment, December 2001, Elsevier

    Morgan Ware

  150. Surface Morphology of SiGe Epitaxial Layers Grown on Uniquely Oriented Si Substrates

    Article • MRS Proceedings, January 2000, Springer Science + Business Media

    Morgan Ware

  151. Stress Relaxation in Uniquely Oriented SiGe/Si Epitaxial Layers

    Article • MRS Proceedings, January 1999, Springer Science + Business Media

    Morgan Ware

  152. Effects of vortex-vortex interactions on ion-track pinning in high-T/sub c/ superconductors

    Article • IEEE Transactions on Applied Superconductivity, June 1997, Institute of Electrical & Electronics Engineers (IEEE)

    Morgan Ware