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  1. Wide bandgap semiconductor materials and devices

    Article • Journal of Applied Physics, June 2022, American Institute of Physics

    Masataka Higashiwaki

  2. Fabrication of n-Si/n-Ga2O3 heterojunctions by surface-activated bonding and their electrical properties

    Article • Journal of Applied Physics, February 2022, American Institute of Physics

    Masataka Higashiwaki

  3. Ultrawide bandgap semiconductors

    Article • Applied Physics Letters, May 2021, American Institute of Physics

    Masataka Higashiwaki

  4. Aperture-limited conduction and its possible mechanism in ion-implanted current aperture vertical β-Ga2O3 MOSFETs

    Article • Applied Physics Letters, January 2021, American Institute of Physics

    Masataka Higashiwaki

  5. Reduction in leakage current through interface between Ga2O3 epitaxial layer and substrate by ion implantation doping of compensating impurities

    Article • Applied Physics Letters, November 2020, American Institute of Physics

    Masataka Higashiwaki

  6. Comment on “Characteristics of Multi-photon Absorption in a β-Ga2O3 Single Crystal” [J. Phys. Soc. Jpn. 88, 113701 (2019)]

    Article • Journal of the Physical Society of Japan, March 2020, Physical Society of Japan

    Masataka Higashiwaki

  7. Enhancement-Mode $\beta$ -Ga2O3 Current Aperture Vertical MOSFETs With N-Ion-Implanted Blocker

    Article • IEEE Electron Device Letters, February 2020, Institute of Electrical & Electronics Engineers (IEEE)

    Masataka Higashiwaki

  8. Vertical Ga2O3 Schottky Barrier Diodes With Guard Ring Formed by Nitrogen-Ion Implantation

    Article • IEEE Electron Device Letters, September 2019, Institute of Electrical & Electronics Engineers (IEEE)

    Masataka Higashiwaki

  9. Normally-Off Ga2O3 MOSFETs With Unintentionally Nitrogen-Doped Channel Layer Grown by Plasma-Assisted Molecular Beam Epitaxy

    Article • IEEE Electron Device Letters, July 2019, Institute of Electrical & Electronics Engineers (IEEE)

    Masataka Higashiwaki

  10. Current Aperture Vertical $\beta$ -Ga2O3 MOSFETs Fabricated by N- and Si-Ion Implantation Doping

    Article • IEEE Electron Device Letters, March 2019, Institute of Electrical & Electronics Engineers (IEEE)

    Masataka Higashiwaki

  11. Wide bandgap oxides

    Article • APL Materials, February 2019, American Institute of Physics

    Masataka Higashiwaki

  12. Raman Thermography of Peak Channel Temperature in $\beta$ -Ga2O3 MOSFETs

    Article • IEEE Electron Device Letters, February 2019, Institute of Electrical & Electronics Engineers (IEEE)

    Masataka Higashiwaki

  13. Single-crystal-Ga2O3/polycrystalline-SiC bonded substrate with low thermal and electrical resistances at the heterointerface

    Article • Applied Physics Letters, January 2019, American Institute of Physics

    Masataka Higashiwaki

  14. Halide vapor phase epitaxy of Si doped β-Ga2O3 and its electrical properties

    Article • Thin Solid Films, November 2018, Elsevier

    Masataka Higashiwaki

  15. Pulsed Large Signal RF Performance of Field-Plated Ga2O3 MOSFETs

    Article • IEEE Electron Device Letters, October 2018, Institute of Electrical & Electronics Engineers (IEEE)

    Masataka Higashiwaki

  16. Acceptor doping of β-Ga2O3 by Mg and N ion implantations

    Article • Applied Physics Letters, September 2018, American Institute of Physics

    Masataka Higashiwaki

  17. Modeling and interpretation of UV and blue luminescence intensity in β-Ga2O3 by silicon and nitrogen doping

    Article • Journal of Applied Physics, August 2018, American Institute of Physics

    Masataka Higashiwaki

  18. Optical signatures of deep level defects in Ga2O3

    Article • Applied Physics Letters, June 2018, American Institute of Physics

    Masataka Higashiwaki

  19. Comparison of O2 and H2O as oxygen source for homoepitaxial growth of β-Ga2O3 layers by halide vapor phase epitaxy

    Article • Journal of Crystal Growth, June 2018, Elsevier

    Masataka Higashiwaki

  20. Recent Advances in Ga2O3 MOSFET Technologies

    Article • June 2018, Institute of Electrical & Electronics Engineers (IEEE)

    Masataka Higashiwaki

  21. All-ion-implanted planar-gate current aperture vertical Ga2O3 MOSFETs with Mg-doped blocking layer

    Article • Applied Physics Express, May 2018, Japan Society of Applied Physics

    Masataka Higashiwaki

  22. Latest progress in gallium-oxide electronic devices

    Article • February 2018, SPIE

    Masataka Higashiwaki

  23. Guest Editorial: The dawn of gallium oxide microelectronics

    Article • Applied Physics Letters, February 2018, American Institute of Physics

    Masataka Higashiwaki

  24. Relation Between Electrical and Optical Properties of p-Type NiO Films

    Article • physica status solidi (b), February 2018, Wiley

    Masataka Higashiwaki

  25. Radiation hardness of β-Ga2O3 metal-oxide-semiconductor field-effect transistors against gamma-ray irradiation

    Article • Applied Physics Letters, January 2018, American Institute of Physics

    Masataka Higashiwaki

  26. Electron effective mass in Sn-doped monoclinic single crystal β-gallium oxide determined by mid-infrared optical Hall effect

    Article • Applied Physics Letters, January 2018, American Institute of Physics

    Masataka Higashiwaki

  27. Band-to-band transitions, selection rules, effective mass, and excitonic contributions in monoclinic β−Ga2O3

    Article • December 2017, American Physical Society (APS)

    Masataka Higashiwaki

  28. Ultrawide-Bandgap Semiconductors: Research Opportunities and Challenges

    Article • Advanced Electronic Materials, December 2017, Wiley

    Masataka Higashiwaki

  29. State-of-the-art technologies of gallium oxide power devices

    Article • Journal of Physics D Applied Physics, July 2017, Institute of Physics Publishing

    Masataka Higashiwaki

  30. Demonstration of Ga2O3 trench MOS-type Schottky barrier diodes

    Article • June 2017, Institute of Electrical & Electronics Engineers (IEEE)

    Masataka Higashiwaki

  31. First Demonstration of Ga2O3Trench MOS-Type Schottky Barrier Diodes

    Article • IEEE Electron Device Letters, June 2017, Institute of Electrical & Electronics Engineers (IEEE)

    Masataka Higashiwaki

  32. First demonstration of vertical Ga2O3 MOSFET: Planar structure with a current aperture

    Article • June 2017, Institute of Electrical & Electronics Engineers (IEEE)

    Masataka Higashiwaki

  33. Radiation hardness of Ga2O3 MOSFETs against gamma-ray irradiation

    Article • June 2017, Institute of Electrical & Electronics Engineers (IEEE)

    Masataka Higashiwaki

  34. Enhancement-mode Ga2O3 MOSFETs with Si-ion-implanted source and drain

    Article • Applied Physics Express, March 2017, Japan Society of Applied Physics

    Masataka Higashiwaki

  35. 1-kV vertical Ga2O3 field-plated Schottky barrier diodes

    Article • Applied Physics Letters, March 2017, American Institute of Physics

    Masataka Higashiwaki

  36. Smart Power Devices and ICs Using GaAs and Wide and Extreme Bandgap Semiconductors

    Article • IEEE Transactions on Electron Devices, March 2017, Institute of Electrical & Electronics Engineers (IEEE)

    Masataka Higashiwaki

  37. Electronic properties of the residual donor in unintentionally doped β-Ga2O3

    Article • Journal of Applied Physics, December 2016, American Institute of Physics

    Masataka Higashiwaki

  38. Current status of Ga2O3power devices

    Article • Japanese Journal of Applied Physics, November 2016, Japan Society of Applied Physics

    Masataka Higashiwaki

  39. Characterization of channel temperature in Ga2O3 metal-oxide-semiconductor field-effect transistors by electrical measurements and thermal modeling

    Article • Applied Physics Letters, November 2016, American Institute of Physics

    Masataka Higashiwaki

  40. Electron channel mobility in silicon-doped Ga2O3MOSFETs with a resistive buffer layer

    Article • Japanese Journal of Applied Physics, October 2016, Japan Society of Applied Physics

    Masataka Higashiwaki

  41. Epitaxially grown crystalline Al2O3interlayer on β-Ga2O3(010) and its suppressed interface state density

    Article • Japanese Journal of Applied Physics, October 2016, Japan Society of Applied Physics

    Masataka Higashiwaki

  42. Gallium Oxide and Related Semiconductors

    Article • Japanese Journal of Applied Physics, October 2016, Japan Society of Applied Physics

    Masataka Higashiwaki

  43. Spectroscopic ellipsometry studies on β-Ga2O3films and single crystal

    Article • Japanese Journal of Applied Physics, September 2016, Japan Society of Applied Physics

    Masataka Higashiwaki

  44. Temperature-dependent capacitance–voltage and current–voltage characteristics of Pt/Ga2O3 (001) Schottky barrier diodes fabricated on n––Ga2O3 drift layers grown by halide vapor phase epitaxy

    Article • Applied Physics Letters, March 2016, American Institute of Physics

    Masataka Higashiwaki

  45. Anisotropy, phonon modes, and free charge carrier parameters in monoclinicβ-gallium oxide single crystals

    Article • March 2016, American Physical Society (APS)

    Masataka Higashiwaki

  46. Theoretical and experimental investigation of optical absorption anisotropy in β-Ga2O3

    Article • Journal of Physics Condensed Matter, March 2016, Institute of Physics Publishing

    Masataka Higashiwaki

  47. Temperature-dependent exciton resonance energies and their correlation with IR-active optical phonon modes in β-Ga2O3 single crystals

    Article • Applied Physics Letters, March 2016, American Institute of Physics

    Masataka Higashiwaki

  48. Large conduction band offset at SiO2/β-Ga2O3heterojunction determined by X-ray photoelectron spectroscopy

    Article • physica status solidi (b), February 2016, Wiley

    Masataka Higashiwaki

  49. Field-Plated Ga2O3MOSFETs With a Breakdown Voltage of Over 750 V

    Article • IEEE Electron Device Letters, February 2016, Institute of Electrical & Electronics Engineers (IEEE)

    Masataka Higashiwaki

  50. Recent progress in Ga2O3power devices

    Article • Semiconductor Science and Technology, January 2016, Institute of Physics Publishing

    Masataka Higashiwaki

  51. Gallium Oxide Schottky Barrier Diodes

    Article • IEEJ Transactions on Electronics Information and Systems, January 2016, Institute of Electrical Engineers of Japan (IEE Japan)

    Masataka Higashiwaki

  52. Valence band ordering in β-Ga2O3studied by polarized transmittance and reflectance spectroscopy

    Article • Japanese Journal of Applied Physics, October 2015, Japan Society of Applied Physics

    Masataka Higashiwaki

  53. Current Status of Gallium Oxide-Based Power Device Technology

    Article • October 2015, Institute of Electrical & Electronics Engineers (IEEE)

    Masataka Higashiwaki

  54. Estimation of carrier density of wide bandgap semiconductor β-Ga2O3 single crystals by THz reflectance measurement

    Article • August 2015, Institute of Electrical & Electronics Engineers (IEEE)

    Masataka Higashiwaki

  55. Ga2O3 Schottky barrier diodes with n−-Ga2O3 drift layers grown by HVPE

    Article • June 2015, Institute of Electrical & Electronics Engineers (IEEE)

    Masataka Higashiwaki

  56. Impacts of AlOxformation on emission properties of AlN/GaN heterostructures

    Article • Applied Physics Express, April 2015, Japan Society of Applied Physics

    Masataka Higashiwaki

  57. Anisotropic thermal conductivity in single crystal β-gallium oxide

    Article • Applied Physics Letters, March 2015, American Institute of Physics

    Masataka Higashiwaki

  58. Anomalous Fe diffusion in Si-ion-implanted β–Ga2O3 and its suppression in Ga2O3 transistor structures through highly resistive buffer layers

    Article • Applied Physics Letters, January 2015, American Institute of Physics

    Masataka Higashiwaki

  59. Homoepitaxial growth of β-Ga 2 O 3 layers by halide vapor phase epitaxy

    Article • Applied Physics Express, December 2014, Japan Society of Applied Physics

    Masataka Higashiwaki

  60. Growth of crystallized AlOx on AlN/GaN heterostructures by in-situ RF-MBE

    Article • Journal of Crystal Growth, November 2014, Elsevier

    Masataka Higashiwaki

  61. Polarized Raman spectra in β-Ga2O3 single crystals

    Article • Journal of Crystal Growth, September 2014, Elsevier

    Masataka Higashiwaki

  62. Systematic investigation of the growth rate of β-Ga 2 O 3 (010) by plasma-assisted molecular beam epitaxy

    Article • Applied Physics Express, August 2014, Japan Society of Applied Physics

    Masataka Higashiwaki

  63. Band alignment and electrical properties of Al2O3/β-Ga2O3 heterojunctions

    Article • Applied Physics Letters, May 2014, American Institute of Physics

    Masataka Higashiwaki

  64. Growth temperature dependences of structural and electrical properties of Ga2O3 epitaxial films grown on β-Ga2O3 (010) substrates by molecular beam epitaxy

    Article • Journal of Crystal Growth, April 2014, Elsevier

    Masataka Higashiwaki

  65. Depletion-mode Ga2O3 MOSFETs on β-Ga2O3 (010) substrates with Si-ion-implanted channel and contacts

    Article • December 2013, Institute of Electrical & Electronics Engineers (IEEE)

    Masataka Higashiwaki

  66. Development of gallium oxide power devices

    Article • phys stat sol (a), November 2013, Wiley

    Masataka Higashiwaki

  67. Research and development on Ga2O3 transistors and diodes

    Article • October 2013, Institute of Electrical & Electronics Engineers (IEEE)

    Masataka Higashiwaki

  68. Depletion-mode Ga2O3 metal-oxide-semiconductor field-effect transistors on β-Ga2O3 (010) substrates and temperature dependence of their device characteristics

    Article • Applied Physics Letters, September 2013, American Institute of Physics

    Masataka Higashiwaki

  69. MBE grown Ga2O3 and its power device applications

    Article • Journal of Crystal Growth, September 2013, Elsevier

    Masataka Higashiwaki

  70. Si-Ion Implantation Doping in β-Ga2O3and Its Application to Fabrication of Low-Resistance Ohmic Contacts

    Article • Applied Physics Express, August 2013, Japan Society of Applied Physics

    Masataka Higashiwaki

  71. Correlation between blue luminescence intensity and resistivity in β-Ga2O3 single crystals

    Article • Applied Physics Letters, July 2013, American Institute of Physics

    Masataka Higashiwaki

  72. Depletion-mode Ga2O3 MOSFETs

    Article • June 2013, Institute of Electrical & Electronics Engineers (IEEE)

    Masataka Higashiwaki

  73. $\hbox{Ga}_{2} \hbox{O}_{3}$ Schottky Barrier Diodes Fabricated by Using Single-Crystal $\beta$– $\hbox{Ga}_{2} \hbox{O}_{3}$ (010) Substrates

    Article • IEEE Electron Device Letters, April 2013, Institute of Electrical & Electronics Engineers (IEEE)

    Masataka Higashiwaki

  74. Ga2O3 Schottky barrier diodes fabricated on single-crystal β-Ga2O3 substrates

    Article • June 2012, Institute of Electrical & Electronics Engineers (IEEE)

    Masataka Higashiwaki

  75. Gallium oxide (Ga2O3) metal-semiconductor field-effect transistors on single-crystal β-Ga2O3 (010) substrates

    Article • Applied Physics Letters, January 2012, American Institute of Physics

    Masataka Higashiwaki

  76. Two-Stage High-Gain High-Power Distributed Amplifier Using Dual-Gate GaN HEMTs

    Article • IEEE Transactions on Microwave Theory and Techniques, August 2011, Institute of Electrical & Electronics Engineers (IEEE)

    Masataka Higashiwaki

  77. Effects of Barrier Thinning on Small-Signal and 30-GHz Power Characteristics of AlGaN/GaN Heterostructure Field-Effect Transistors

    Article • IEEE Transactions on Electron Devices, June 2011, Institute of Electrical & Electronics Engineers (IEEE)

    Masataka Higashiwaki

  78. Distributed surface donor states and the two-dimensional electron gas at AlGaN/GaN heterojunctions

    Article • Journal of Physics D Applied Physics, December 2010, Institute of Physics Publishing

    Masataka Higashiwaki

  79. Effects of oxidation on surface chemical states and barrier height of AlGaN/GaN heterostructures

    Article • Applied Physics Letters, November 2010, American Institute of Physics

    Masataka Higashiwaki

  80. Distribution of donor states on etched surface of AlGaN/GaN heterostructures

    Article • Journal of Applied Physics, September 2010, American Institute of Physics

    Masataka Higashiwaki

  81. Si Delta-Dopedm-Plane AlGaN/GaN Heterojunction Field-Effect Transistors

    Article • Applied Physics Express, June 2009, Institute of Physics Publishing

    Masataka Higashiwaki

  82. Small-signal and 30-GHz power performance of AlGaN/GaN HFETs without back barriers

    Article • June 2009, Institute of Electrical & Electronics Engineers (IEEE)

    Masataka Higashiwaki

  83. Effect of Dielectric Thickness on Power Performance of AlGaN/GaN HEMTs

    Article • IEEE Electron Device Letters, April 2009, Institute of Electrical & Electronics Engineers (IEEE)

    Masataka Higashiwaki

  84. A comparative study of effects of SiNx deposition method on AlGaN/GaN heterostructure field-effect transistors

    Article • Applied Physics Letters, February 2009, American Institute of Physics

    Masataka Higashiwaki

  85. Enhancement-Modem-plane AlGaN/GaN Heterojunction Field-Effect Transistors

    Article • Applied Physics Express, January 2009, Institute of Physics Publishing

    Masataka Higashiwaki

  86. Development of High-Frequency GaN HFETs for Millimeter-Wave Applications

    Article • IEICE Transactions on Electronics, July 2008, Institute of Electronics, Information and Communications Engineers (IEICE)

    Masataka Higashiwaki

  87. A comparative study of SiN deposition methods for millimeter-wave AlGaN/GaN HFETs

    Article • June 2008, Institute of Electrical & Electronics Engineers (IEEE)

    Masataka Higashiwaki

  88. Millimeter-wave GaN HFET technology

    Article • February 2008, SPIE

    Masataka Higashiwaki

  89. AlGaN/GaN Heterostructure Field-Effect Transistors on 4H-SiC Substrates with Current-Gain Cutoff Frequency of 190 GHz

    Article • Applied Physics Express, February 2008, Institute of Physics Publishing

    Masataka Higashiwaki

  90. GaN-based FETs using Cat-CVD SiN passivation for millimeter-wave applications

    Article • Thin Solid Films, January 2008, Elsevier

    Masataka Higashiwaki

  91. Development of millimeter-wave GaN HFET technology

    Article • phys stat sol (a), June 2007, Wiley

    Masataka Higashiwaki

  92. Enhancement-Mode AlN/GaN HFETs Using Cat-CVD SiN

    Article • IEEE Transactions on Electron Devices, June 2007, Institute of Electrical & Electronics Engineers (IEEE)

    Masataka Higashiwaki

  93. XPS study of surface potential in AlGaN/GaN heterostructure with Cat-CVD SiN passivation

    Article • physica status solidi c, June 2007, Wiley

    Masataka Higashiwaki

  94. Erratum: “High-Performance Short-Gate InAlN/GaN Heterostructure Field-Effect Transistors”

    Article • Japanese Journal of Applied Physics, May 2007, Japan Society of Applied Physics

    Masataka Higashiwaki

  95. Reduction in potential barrier height of AlGaN∕GaN heterostructures by SiN passivation

    Article • Journal of Applied Physics, February 2007, American Institute of Physics

    Masataka Higashiwaki

  96. Superconductivity of InN observed in the magnetoresistance at low temperature

    Article • Journal of Physics Conference Series, November 2006, Institute of Physics Publishing

    Masataka Higashiwaki

  97. 30-nm-Gate AlGaN/GaN Heterostructure Field-Effect Transistors with a Current-Gain Cutoff Frequency of 181 GHz

    Article • Japanese Journal of Applied Physics, October 2006, Japan Society of Applied Physics

    Masataka Higashiwaki

  98. AlN/GaN Insulated-Gate HFETs Using Cat-CVD SiN

    Article • IEEE Electron Device Letters, September 2006, Institute of Electrical & Electronics Engineers (IEEE)

    Masataka Higashiwaki

  99. High-Performance Short-Gate InAlN/GaN Heterostructure Field-Effect Transistors

    Article • Japanese Journal of Applied Physics, August 2006, Japan Society of Applied Physics

    Masataka Higashiwaki

  100. Effects of SiN passivation by catalytic chemical vapor deposition on electrical properties of AlGaN∕GaN heterostructure field-effect transistors

    Article • Journal of Applied Physics, August 2006, American Institute of Physics

    Masataka Higashiwaki

  101. Superconductivity of InN with a well defined Fermi surface

    Article • physica status solidi (b), June 2006, Wiley

    Masataka Higashiwaki

  102. HighfTandfmaxAlGaN/GaN HFETs achieved by using thin and high-Al-composition AlGaN barrier layers and Cat-CVD SiN passivation

    Article • phys stat sol (a), May 2006, Wiley

    Masataka Higashiwaki

  103. High sensitivity and quantitative magnetic field measurements at 600°C

    Article • Journal of Applied Physics, April 2006, American Institute of Physics

    Masataka Higashiwaki

  104. AlGaN/GaN MIS-HFETs with f/sub T/ of 163 GHz using cat-CVD SiN gate-insulating and passivation Layers

    Article • IEEE Electron Device Letters, January 2006, Institute of Electrical & Electronics Engineers (IEEE)

    Masataka Higashiwaki

  105. Electron density dependence of the electronic structure of InN epitaxial layers grown on sapphire (0001)

    Article • Physical Review B, August 2005, American Physical Society (APS)

    Masataka Higashiwaki

  106. MBE growth and device characteristics of InAlN/GaN HFETs

    Article • physica status solidi c, May 2005, Wiley

    Masataka Higashiwaki

  107. AlGaN/GaN Heterostructure Field-Effect Transistors with Current Gain Cut-off Frequency of 152 GHz on Sapphire Substrates

    Article • Japanese Journal of Applied Physics, April 2005, Japan Society of Applied Physics

    Masataka Higashiwaki

  108. Cat-CVD SiN-passivated AlGaN-GaN HFETs with thin and high Al composition barrier Layers

    Article • IEEE Electron Device Letters, March 2005, Institute of Electrical & Electronics Engineers (IEEE)

    Masataka Higashiwaki

  109. Vacancy-type defects in Si-doped InN grown by plasma-assisted molecular-beam epitaxy probed using monoenergetic positron beams

    Article • Journal of Applied Physics, February 2005, American Institute of Physics

    Masataka Higashiwaki

  110. 120-nm-T-shaped-Mo∕Pt∕Au-gate AlGaN∕GaN high electron mobility transistors

    Article • Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena, January 2005, American Vacuum Society

    Masataka Higashiwaki

  111. Effect of thermal annealing on 120-nm-T-shaped-Ti∕Pt∕Au-gate AlGaN∕GaN high electron mobility transistors

    Article • Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena, January 2005, American Vacuum Society

    Masataka Higashiwaki

  112. Barrier Thickness Dependence of Electrical Properties and DC Device Characteristics of AlGaN/GaN Heterostructure Field-Effect Transistors Grown by Plasma-Assisted Molecular-Beam Epitaxy

    Article • Japanese Journal of Applied Physics, August 2004, Japan Society of Applied Physics

    Masataka Higashiwaki

  113. Estimation of band-gap energy of intrinsic InN from photoluminescence properties of undoped and Si-doped InN films grown by plasma-assisted molecular-beam epitaxy

    Article • Journal of Crystal Growth, August 2004, Elsevier

    Masataka Higashiwaki

  114. InAlN/GaN Heterostructure Field-Effect Transistors Grown by Plasma-Assisted Molecular-Beam Epitaxy

    Article • Japanese Journal of Applied Physics, May 2004, Japan Society of Applied Physics

    Masataka Higashiwaki

  115. Non-Recessed-Gate Enhancement-Mode AlGaN/GaN High Electron Mobility Transistors with High RF Performance

    Article • Japanese Journal of Applied Physics, April 2004, Japan Society of Applied Physics

    Masataka Higashiwaki

  116. Optical properties of Si-doped InN grown on sapphire (0001)

    Article • December 2003, American Physical Society (APS)

    Masataka Higashiwaki

  117. Electronic structure of InN observed by Shubnikov–de Haas measurements

    Article • physica status solidi c, December 2003, Wiley

    Masataka Higashiwaki

  118. Fabrication of sub-50-nm-gate i-AlGaN/GaN HEMTs on sapphire

    Article • physica status solidi c, December 2003, Wiley

    Masataka Higashiwaki

  119. Control of electron density in InN by Si doping and optical properties of Si-doped InN

    Article • physica status solidi (b), November 2003, Wiley

    Masataka Higashiwaki

  120. Epitaxial growth of high-quality InN films on sapphire substrates by plasma-assisted molecular-beam epitaxy

    Article • Journal of Crystal Growth, May 2003, Elsevier

    Masataka Higashiwaki

  121. Plasma-assisted MBE growth of InN films and InAlN/InN heterostructures

    Article • Journal of Crystal Growth, April 2003, Elsevier

    Masataka Higashiwaki

  122. Effect of Low-Temperature-Grown GaN Intermediate Layer on InN Growth by Plasma-Assisted MBE

    Article • physica status solidi c, January 2003, Wiley

    Masataka Higashiwaki

  123. High-Quality InN Film Grown on a Low-Temperature-Grown GaN Intermediate Layer by Plasma-Assisted Molecular-Beam Epitaxy

    Article • Japanese Journal of Applied Physics, May 2002, Japan Society of Applied Physics

    Masataka Higashiwaki

  124. Fabrication Technology and Device Performance of Sub-50-nm-Gate InP-Based High Electron Mobility Transistors

    Article • Japanese Journal of Applied Physics, February 2002, Japan Society of Applied Physics

    Masataka Higashiwaki

  125. Ultra-short 25-nm-gate lattice-matched InAlAs/InGaAs HEMTs within the range of 400 GHz cutoff frequency

    Article • IEEE Electron Device Letters, August 2001, Institute of Electrical & Electronics Engineers (IEEE)

    Masataka Higashiwaki

  126. High fT 50-nm-Gate InAlAs/InGaAs High Electron Mobility Transistors Lattice-Matched to InP Substrates

    Article • Japanese Journal of Applied Physics, August 2000, Japan Society of Applied Physics

    Masataka Higashiwaki

  127. DC and RF Performance of 50 nm Gate Pseudomorphic In0.7Ga0.3As/In0.52Al0.48As High Electron Mobility Transistors Grown on (411)A-Oriented InP Substrates by Molecular-Beam Epitaxy

    Article • Japanese Journal of Applied Physics, July 2000, Japan Society of Applied Physics

    Masataka Higashiwaki

  128. Laser operation at room temperature of self-organized In[sub 0.1]Ga[sub 0.9]As/(GaAs)[sub 6](AlAs)[sub 1] quantum wires grown on (775)B-oriented GaAs substrates by molecular beam epitaxy

    Article • Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena, January 2000, American Vacuum Society

    Masataka Higashiwaki

  129. GaAs/(GaAs)4(AlAs)2 quantum wire lasers grown on (775)B-oriented GaAs substrates by molecular beam epitaxy

    Article • Journal of Crystal Growth, May 1999, Elsevier

    Masataka Higashiwaki

  130. In0.15Ga0.85As/GaAs quantum wire structures grown on (553)B GaAs substrates by molecular beam epitaxy

    Article • Journal of Crystal Growth, May 1999, Elsevier

    Masataka Higashiwaki

  131. Self-organized GaAs quantum-wire lasers grown on (775)B-oriented GaAs substrates by molecular beam epitaxy

    Article • Applied Physics Letters, February 1999, American Institute of Physics

    Masataka Higashiwaki

  132. High-density In0.14Ga0.86As/(GaAs)5(AlAs)5 quantum wires naturally formed on (775)B-oriented GaAs substrates by molecular beam epitaxy

    Article • Microelectronic Engineering, August 1998, Elsevier

    Masataka Higashiwaki

  133. Temperature dependence of exciton lifetimes in high-density GaAs/(GaAs)4(AlAs)2 quantum wires grown on (775)B-oriented GaAs substrates by molecular beam epitaxy

    Article • Solid-State Electronics, July 1998, Elsevier

    Masataka Higashiwaki

  134. Temperature dependence of photoluminescence from high-density GaAs/(GaAs)4(AlAs)2 quantum wires grown on (775)B-oriented GaAs substrates by molecular beam epitaxy

    Article • Physica E Low-dimensional Systems and Nanostructures, July 1998, Elsevier

    Masataka Higashiwaki

  135. Surface Corrugation of GaAs Layers Grown on (775)B-Oriented GaAs Substrates by Molecular Beam Epitaxy

    Article • Japanese Journal of Applied Physics, October 1997, Japan Society of Applied Physics

    Masataka Higashiwaki

  136. Highly uniform and high-density GaAs/(GaAs)4(AlAs)2 quantum wires grown on (775)B-oriented GaAs substrates by molecular beam epitaxy

    Article • Applied Physics Letters, October 1997, American Institute of Physics

    Masataka Higashiwaki

  137. High-density quantum wires naturally formed on (7 7 5)B-oriented GaAs substrates by molecular beam epitaxy

    Article • Journal of Crystal Growth, May 1997, Elsevier

    Masataka Higashiwaki

  138. High-Density GaAs/AlAs Quantum Wires Grown on (775)B-Oriented GaAs Substrates by Molecular Beam Epitaxy

    Article • Japanese Journal of Applied Physics, May 1996, Japan Society of Applied Physics

    Masataka Higashiwaki

  139. Low temperature etching of GaAs substrates and improved morphology of GaAs grown by metalorganic molecular beam epitaxy using trisdimethylaminoarsenic and triethylgallium

    Article • Journal of Crystal Growth, May 1995, Elsevier

    Masataka Higashiwaki

  140. Cat-CVD SiN insulated-gate AlGaN/GaN HFETs with 163 GHz f/sub T/ and 184 GHz f/sub max/

    Article • Institute of Electrical & Electronics Engineers (IEEE)

    Masataka Higashiwaki

  141. InP HEMTs: physics, applications, and future

    Article • Institute of Electrical & Electronics Engineers (IEEE)

    Masataka Higashiwaki

  142. Plasma-assisted MBE growth of InN film and InAlN/InN heterostructure

    Article • Institute of Electrical & Electronics Engineers (IEEE)

    Masataka Higashiwaki

  143. Fabrication technology and device performance of sub-50-nm-gate InP-based HEMTs

    Article • Institute of Electrical & Electronics Engineers (IEEE)

    Masataka Higashiwaki

  144. High f/sub T/ 50-nm-gate lattice-matched InAlAs/InGaAs HEMTs

    Article • Institute of Electrical & Electronics Engineers (IEEE)

    Masataka Higashiwaki

  145. Pseudomorphic In/sub 0.7/Ga/sub 0.3/As/In/sub 0.52/Al/sub 0.48/As HEMTs with super-flat interfaces fabricated on [411] A-oriented InP substrates

    Article • Institute of Electrical & Electronics Engineers (IEEE)

    Masataka Higashiwaki