All Stories

  1. Effect of molecular adsorption on the conductivity of selectively grown, interconnected 2D-MoS2 atomically thin flake structures
  2. Influence of in-situ hydrogenation on photoelectrical properties of amorphous and nanocrystalline GeSn deposited by magnetron sputtering
  3. Influence of Ge Concentration and Deposition Temperature on the Photoresponse Characteristics of Ge:SiO2 Nanocomposite Thin Films
  4. SWIR Photosensing of GeSn-HfO2 Films with Small Si Amount
  5. Optimizing photocurrent intensity in layered SiGe heterostructures
  6. Optimizing SiGe–SiO2 Visible–Short‐Wave Infrared Photoresponse by Modulating Interplay Between Strain and Defects Through Annealing
  7. Enhancing Short-Wave Infrared Photosensitivity of SiGe Nanocrystals-Based Films through Embedding Matrix-Induced Passivation, Stress, and Nanocrystallization
  8. Atomically Thin MoS2 Layers Selectively Grown on Mo Patterned Substrates for Field-Effect-Controlled Photosensors
  9. Enhancing SiGeSn nanocrystals SWIR photosensing by high passivation in nanocrystalline HfO2 matrix
  10. Annealing Effects on the Charging–Discharging Mechanism in Trilayer Al2O3/Ge/Al2O3Memory Structures
  11. Near infrared photo-response of as-deposited films based on GeSn nanoparticles in Si3N4 dielectric
  12. Extended near infrared photo-response influenced by host matrix change in Ge nanoparticle-based films
  13. Memory Properties of Zr-Doped ZrO2 MOS-like Capacitor
  14. SiGeSn Quantum Dots in HfO2 for Floating Gate Memory Capacitors
  15. Graphene/Ferroelectric (Ge-Doped HfO2) Adaptable Transistors Acting as Reconfigurable Logic Gates
  16. Nanocrystallized Ge-Rich SiGe-HfO2 Highly Photosensitive in Short-Wave Infrared
  17. In-situ magnetron sputtering co-deposition of Ge nanoparticles in Si3N4 films for near infrared detection
  18. Memory properties of GeZrO2 based trilayer structure
  19. Photoluminescence study of Si1-xGex nanoparticles in various oxide matrices
  20. Bandgap atomistic calculations on hydrogen-passivated GeSi nanocrystals
  21. Effects of Ge-related storage centers formation in Al2O3 enhancing the performance of floating gate memories
  22. A nanoscale continuous transition from the monoclinic to ferroelectric orthorhombic phase inside HfO2 nanocrystals stabilized by HfO2 capping and self-controlled Ge doping
  23. GeSn/SiO2 Multilayers by Magnetron Sputtering Deposition for Short-Wave Infrared Photonics
  24. GeSi Nanocrystals Photo-Sensors for Optical Detection of Slippery Road Conditions Combining Two Classification Algorithms
  25. Influence of SiGe Nanocrystallization on Short-Wave Infrared Sensitivity of SiGe–TiO2 Films and Multilayers
  26. SWIR photoresponse of SiGe/TiO2 multilayers with Ge-rich SiGe nanocrystals
  27. Wafer-scale graphene-ferroelectric HfO2/Ge–HfO2/HfO2 transistors acting as three-terminal memristors
  28. Epitaxial GeSn Obtained by High Power Impulse Magnetron Sputtering and the Heterojunction with Embedded GeSn Nanocrystals for Shortwave Infrared Detection
  29. Obtaining SiGe nanocrystallites between crystalline TiO2 layers by HiPIMS without annealing
  30. SiGe nanocrystals in SiO2 with high photosensitivity from visible to short-wave infrared
  31. High performance NIR photosensitive films of Ge nanoparticles in Si3 N4
  32. Controlling SWIR photosensitivity limit by composition engineering: from Ge to GeSi nanocrystals embedded in TiO2
  33. Fabrication and characterization of Si1−xGex nanocrystals in as-grown and annealed structures
  34. Orthorhombic HfO2 with embedded Ge nanoparticles in nonvolatile memories used for the detection of ionizing radiation
  35. Ge nanoparticles in SiO2 for near infrared photodetectors with high performance
  36. Efficacy of annealing and fabrication parameters on photo-response of SiGe in TiO2 matrix
  37. Enhanced photoconductivity of embedded SiGe nanoparticles by hydrogenation
  38. GeSn Nanocrystals in GeSnSiO2 by Magnetron Sputtering for Short-Wave Infrared Detection
  39. Fabrication and characterization of Si1-xGex nanocrystals in as-grown and annealed structures: A comparative study
  40. Enhanced photoconductivity of SiGe nanocrystals in SiO2 driven by mild annealing
  41. Optoelectric charging-discharging of Ge nanocrystals in floating gate memory
  42. GeSi NCs / TiO2 multilayers with enhanced photocurrent properties were prepared and studied.
  43. Trilayer MOS capacitors based on HfO2 were prepared for detection of ionizing radiation.
  44. Enhanced Photoconductivity of SIGE-Trilayer Stack by Retrenching Annealing Conditions
  45. GeSi Nanocrystals in SiO2 Matrix with Extended Photoresponse in Near Infrared
  46. The Effect of H2/Ar Plasma Treatment Over Photoconductivity of Sige Nanoparticles Sandwiched Between Silicon Oxide Matrix
  47. Dense Ge nanocrystals embedded in TiO2 with exponentially increased photoconduction by field effect
  48. Material parameters from frequency dispersion simulation of floating gate memory with Ge nanocrystals in HfO 2
  49. Electrical Characterization Techniques for Porous Silicon
  50. Influence of preparation conditions on structure and photosensing properties of GeSi/TiO2 multilayers
  51. Light illumination effects on floating gate memory with Ge nanocrystals in HfO2
  52. Photosensitive GeSi/TiO2 multilayers in VIS-NIR
  53. Isotactic polypropylene-vapor grown carbon nanofibers composites: Electrical properties
  54. Ge quantum dots in HfO2 for floating gate memory capacitors
  55. Fast atomic diffusion in amorphous films induced by laser pulse annealing
  56. Non-volatile memory structures with Ge NCs-HfO2 intermediate layer
  57. Correlation between strain and defects in Bi implanted Si
  58. How morphology determines the charge storage properties of Ge nanocrystals in HfO2
  59. Non-volatile memory devices based on Ge nanocrystals
  60. HfO2 with embedded Ge nanocrystals with memory effects
  61. Nanostructuring of GeTiO amorphous films by pulsed laser irradiation
  62. Strain-induced modification of trap parameters due to the stopped ions in Bi-irradiated Si
  63. Charge storage properties of HfO2/Ge-HfO2/SiO2 trilayer structures
  64. Transition in conduction mechanism in GeSi nanostructures
  65. Trapping centers in heavy ion irradiated silicon
  66. Annealing induced changes in the structure, optical and electrical properties of GeTiO2 nanostructured films
  67. Electrical properties related to the structure of GeSi nanostructured films
  68. GeSiO Based Nanostructures: Electrical Behaviour Related to Morphology and Preparation Method
  69. Numerical Procedure for Optimizing Dye-Sensitized Solar Cells
  70. Stress influenced trapping processes in Si based multi-quantum well structures and heavy ions implanted Si
  71. Annealing temperature effect on structure and electrical properties of films formed of Ge nanoparticles in SiO2
  72. Conduction mechanism versus annealing in SiO2 films with Ge nanoparticles
  73. Effect of bismuth irradiation on crystalline silicon
  74. Dense Ge nanocrystal layers embedded in oxide obtained by controlling the diffusion–crystallization process
  75. Analysis of defect formation in semiconductor cryogenic bolometric detectors created by heavy dark matter
  76. Effects produced by iodine irradiation on high resistivity silicon
  77. Iodine irradiation induced defects in crystalline silicon
  78. Transport mechanisms in SiO2 films with embedded Germanium nanoparticles
  79. Structure and electrical transport in films of Ge nanoparticles embedded in SiO2 matrix
  80. Preparation and electrical characterization of SiGe nanostructures
  81. Preparation induced electrical behaviour of GeSiO nanostructures
  82. Stress-induced traps in multilayered structures
  83. Size and temperature effects on the viscosity of water inside carbon nanotubes
  84. Influence of preparation method on structural properties of GeSiO nanosystems
  85. Temperature dependence of capture coefficients in trapping phenomena
  86. Numerical analysis of J-V characteristics of a polymer solar cell
  87. Structural investigations of Ge nanoparticles embedded in an amorphous SiO2 matrix
  88. Calculation of the quantum efficiency for the absorption on confinement levels in quantum dots
  89. The influence of shape and potential barrier on confinement energy levels in quantum dots
  90. Quantum Confinement in Nanometric Structures
  91. Investigation of electrical properties of carbon nanotubes
  92. Point and extended defects in irradiated silicon and consequences for detectors
  93. Morphology of Si nanocrystallites embedded in SiO2 matrix
  94. Modeling of trap discharging processes in Multiple Quantum Well structures
  95. Some Contributions to the Understanding of the Puzzle of Physical Processes of Degradation in Irradiated Silicon
  96. Trapping phenomena in silicon-based nanocrystalline semiconductors
  97. Why the Energy Levels Observed in Electrical Transport, Phototransport and Photoluminescence are Different?
  98. Quantum Confinement Model for Phototransport Processes in Nanocrystalline Porous Silicon
  99. Electronic transport in Si–SiO2 nanocomposite films
  100. Core-shell effects in granular perovskite manganites
  101. Quantum confinement effect on the electrical transport and photoluminescence processes in nanocrystalline porous silicon
  102. Modeling of optical charging spectroscopy investigation of trapping phenomena in nanocrystalline porous silicon
  103. Coupled confinement effect on the photoluminescence and electrical transport in porous silicon
  104. Trapping levels in (nc-Si/CaF2)n multi-quantum wells
  105. Oxidation-Induced Modifications of Trap Parameters in Nanocrystalline Porous Silicon
  106. Trapping levels in nanocrystalline porous silicon
  107. Microstructural Aspects Related to Carriers Transport Properties of Nanocrystalline Porous Silicon Films
  108. Quantum confinement model for electric transport phenomena in fresh and stored photoluminescent porous silicon films
  109. Photoluminescence decay in porous silicon films
  110. Influence of thermal annealing on optical properties of porous silicon films
  111. Electrical behaviour of fresh and stored porous silicon films
  112. Visible photoluminescence in porous silicon prepared in different conditions - temperature dependence and decay
  113. Interface trapping states in MISIM structures, with ZnS:Mn
  114. Trapping levels in Bi12SiO20crystals
  115. Laser Plasma Vapour Deposition Of Photoconducting And High Tc Superconducting Films
  116. Traps in polycrystalline CdTe thin films
  117. Light-induced changes in electrical properties of As3Se2 thin films
  118. Some non-equilibrium phenomena in sputtered CdTe thin films
  119. Quantum confinement in the photoluminescence of nanocrystalline porous silicon
  120. Electrical behavior of Si/SiO/sub 2/ nanocomposite films
  121. Traps in (nc-Si/CaF/sub 2/)/sub 50/ nanostructures