All Stories

  1. Conversion of Shockley partial dislocation pairs from unexpandable to expandable combinations after epitaxial growth of 4H-SiC

    Article • Journal of Applied Physics, August 2021, American Institute of Physics

    Johji Nishio

  2. Defect characterization in semiconductor SiC material.

    Article • Journal of Applied Physics, August 2020, American Institute of Physics

    Johji Nishio

  3. Initiation of Shockley Stacking Fault Expansion in 4H-SiC P-i-N Diodes

    Article • Materials Science Forum, July 2019, Trans Tech Publications

    Johji Nishio

  4. Evaluation of Effect of Mechanical Stress on Stacking Fault Expansion in 4H-SiC P-i-N Diode

    Article • Materials Science Forum, July 2019, Trans Tech Publications

    Kenji Hirohata, Johji Nishio

  5. Dynamics Analysis of Single Shockley Stacking Fault Expansion in 4H-SiC P-i-N Diode Based on Free Energy

    Article • Materials Science Forum, July 2019, Trans Tech Publications

    Kenji Hirohata, Johji Nishio

  6. Carrier Lifetimes in 4H-SiC Epitaxial Layers on the C-Face Enhanced by Carbon Implantation

    Article • Materials Science Forum, June 2018, Trans Tech Publications

    Johji Nishio

  7. Improvement of 4H-SiC Epitaxial Layers Grown on 2o Offcut Si-Face Substrates

    Article • Materials Science Forum, May 2016, Trans Tech Publications

    Hirokuni Asamizu, Johji Nishio