All Stories

  1. Impact of Liner Metals on Copper Resistivity at Beyond 7nm Dimensions

    Article • June 2018, Institute of Electrical & Electronics Engineers (IEEE)

    Huai Huang

  2. Modified ALD TaN Barrier with Ru Liner and Dynamic Cu Reflow for 36nm Pitch Interconnect Integration

    Article • June 2018, Institute of Electrical & Electronics Engineers (IEEE)

    Huai Huang

  3. Process Challenges in Fully Aligned Via Integration for sub 32 nm Pitch BEOL

    Article • June 2018, Institute of Electrical & Electronics Engineers (IEEE)

    Huai Huang

  4. Ru Liner Scaling with ALD TaN Barrier Process for Low Resistance 7 nm Cu Interconnects and Beyond

    Article • June 2018, Institute of Electrical & Electronics Engineers (IEEE)

    Huai Huang

  5. Validity and Application of the TCR Method to MOL contactS

    Article • June 2018, Institute of Electrical & Electronics Engineers (IEEE)

    Huai Huang

  6. Future on-chip interconnect metallization and electromigration

    Article • March 2018, Institute of Electrical & Electronics Engineers (IEEE)

    Huai Huang

  7. Fully aligned via integration for extendibility of interconnects to beyond the 7 nm node

    Article • December 2017, Institute of Electrical & Electronics Engineers (IEEE)

    Huai Huang

  8. Line Resistance Reduction in Advanced Copper Interconnects

    Article • IEEE Electron Device Letters, November 2017, Institute of Electrical & Electronics Engineers (IEEE)

    Huai Huang

  9. Cobalt/copper composite interconnects for line resistance reduction in both fine and wide lines

    Article • May 2017, Institute of Electrical & Electronics Engineers (IEEE)

    Huai Huang

  10. Electromigration and resistivity in on-chip Cu, Co and Ru damascene nanowires

    Article • May 2017, Institute of Electrical & Electronics Engineers (IEEE)

    Huai Huang

  11. Methods to lower the resistivity of ruthenium interconnects at 7 nm node and beyond

    Article • May 2017, Institute of Electrical & Electronics Engineers (IEEE)

    Huai Huang

  12. Microstructure modulation for resistance reduction in copper interconnects

    Article • May 2017, Institute of Electrical & Electronics Engineers (IEEE)

    Huai Huang

  13. SFG analysis of the molecular structures at the surfaces and buried interfaces of PECVD ultralow-dielectric constant pSiCOH: Reactive ion etching and dielectric recovery

    Article • Applied Physics Letters, May 2017, American Institute of Physics

    Huai Huang

  14. An OCD perspective of line edge and line width roughness metrology

    Article • March 2017, SPIE

    Huai Huang

  15. Comprehensive analysis of line-edge and line-width roughness for EUV lithography

    Article • March 2017, SPIE

    Huai Huang

  16. Advanced single precursor based pSiCOH k = 2.4 for ULSI interconnects

    Article • Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena, March 2017, American Vacuum Society

    Huai Huang

  17. A novel analytical capacitance model for sub-10 nm interconnects

    Article • May 2016, Institute of Electrical & Electronics Engineers (IEEE)

    Huai Huang

  18. Experimental study of nanoscale Co damascene BEOL interconnect structures

    Article • May 2016, Institute of Electrical & Electronics Engineers (IEEE)

    Huai Huang

  19. Post porosity plasma protection integration at 48 nm pitch

    Article • May 2016, Institute of Electrical & Electronics Engineers (IEEE)

    Huai Huang

  20. Ruthenium interconnect resistivity and reliability at 48 nm pitch

    Article • May 2016, Institute of Electrical & Electronics Engineers (IEEE)

    Huai Huang

  21. SFG analysis of the molecular structures at the surfaces and buried interfaces of PECVD ultralow-dielectric constant pSiCOH

    Article • Journal of Applied Physics, February 2016, American Institute of Physics

    Huai Huang

  22. Plasma processing of low-k dielectrics

    Article • Journal of Applied Physics, January 2013, American Institute of Physics

    Huai Huang

  23. Role of ions, photons, and radicals in inducing plasma damage to ultra low-k dielectrics

    Article • Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena, January 2012, American Vacuum Society

    Huai Huang

  24. Minimization of plasma ashing damage to OSG low-k dielectrics

    Article • June 2010, Institute of Electrical & Electronics Engineers (IEEE)

    Huai Huang

  25. Oxygen plasma damage to blanket and patterned ultralow-κ surfaces

    Article • Journal of Vacuum Science & Technology A Vacuum Surfaces and Films, March 2010, American Vacuum Society

    Huai Huang

  26. Small angle X-ray scattering measurements of spatial dependent linewidth in dense nanoline gratings

    Article • Thin Solid Films, August 2009, Elsevier

    Huai Huang

  27. Plasma altered layer model for plasma damage characterization of porous OSG films

    Article • June 2009, Institute of Electrical & Electronics Engineers (IEEE)

    Huai Huang

  28. Indentation of single-crystal silicon nanolines: Buckling and contact friction at nanoscales

    Article • Journal of Applied Physics, April 2009, American Institute of Physics

    Huai Huang

  29. Nanoindentation of Si Nanostructures: Buckling and Friction at Nanoscales

    Article • January 2009, American Institute of Physics

    Huai Huang

  30. Origin of dielectric loss induced by oxygen plasma on organo-silicate glass low-k dielectrics

    Article • Applied Physics Letters, November 2008, American Institute of Physics

    Huai Huang

  31. Extraction of trench geometry and linewidth of nanoscale grating targets in (110)-oriented silicon using angle-resolved scatterometry

    Article • August 2008, SPIE

    Huai Huang

  32. Dielectric Recovery of Plasma Damaged Organosilicate Low-k Films

    Article • MRS Proceedings, January 2008, Cambridge University Press

    Huai Huang

  33. Mechanical Characterization of High Aspect Ratio Silicon Nanolines

    Article • MRS Proceedings, January 2008, Cambridge University Press

    Huai Huang

  34. Mechanistic study of plasma damage of low k dielectric surfaces

    Article • Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena, January 2008, American Vacuum Society

    Huai Huang

  35. Mechanistic Study of Plasma Damage of Low k Dielectric Surfaces

    Article • January 2007, American Institute of Physics

    Huai Huang