All Stories

  1. Ideal phonon-scattering-limited mobility in inversion channels of 4H-SiC(0001) MOSFETs with ultralow net doping concentrations

    Article • Applied Physics Letters, September 2019, American Institute of Physics

    Heiji Watanabe, Dr Hiroshi Yano

  2. Sub-nm-Scale Depth Profiling of Nitrogen in NO- and N2-Annealed SiO2/4H-SiC(0001) Structures

    Article • Materials Science Forum, July 2019, Trans Tech Publications

    Heiji Watanabe

  3. Evaluation of the Impact of Al Atoms on SiO2/ SiC Interface Property by Using 4H-SiC n+-Channel Junctionless MOSFET

    Article • Materials Science Forum, July 2019, Trans Tech Publications

    Heiji Watanabe

  4. Improvement of SiO2/4H-SiC(0001) Interface Properties by H2 and Ar Mixture Gas Treatment Prior to SiO2 Deposition

    Article • Materials Science Forum, June 2018, Trans Tech Publications

    Heiji Watanabe, Yutaka Terao

  5. Cathodoluminescence Study of SiO2/4H-SiC Structures Treated with High-Temperature Post-Oxidation Annealing

    Article • Materials Science Forum, May 2016, Trans Tech Publications

    Dr. Atthawut Chanthaphan, Heiji Watanabe

  6. Impact of NO Annealing on Flatband Voltage Instability due to Charge Trapping in SiС MOS Devices

    Article • Materials Science Forum, May 2016, Trans Tech Publications

    Heiji Watanabe

  7. Improving Interface Quality of 4H-SiC MOS Devices with High Temperature Oxidation Process in Mass Produce Furnace

    Article • Materials Science Forum, June 2015, Trans Tech Publications

    Heiji Watanabe