All Stories

  1. Interfacial stress transfer in monolayer and few-layer MoS2 nanosheets in model nanocomposites
  2. The strange shapes a twisted ribbon or strip of paper can adopt under tension
  3. Significant interlayer coupling in bilayer graphene and double-walled carbon nanotubes: A refinement of obtaining strain in low-dimensional materials
  4. Softening of the Euler Buckling Criterion under Discretization of Compliance
  5. What we know–and don’t know–about the mechanical and thermal properties of graphene.
  6. Unexpected softness of bilayer graphene and softening of A-A stacked graphene layers
  7. Nanostrain sensitivity in a wire torsion experiment
  8. Spider dragline silk as torsional actuator driven by humidity
  9. Factors determining the magnitude of grain-size strengthening in polycrystalline metals
  10. Critical thickness phenomenon in single-crystalline wires under torsion
  11. Peculiar torsion dynamical response of spider dragline silk
  12. The new high field photoexcitation muon spectrometer at the ISIS pulsed neutron and muon source
  13. The Hall–Petch effect as a manifestation of the general size effect
  14. Resonance Raman spectroscopy of carbon nanotubes: pressure effects on G-mode
  15. New experimental test of strain-gradient plasticity theory: metal foil sandwich structures in flexure
  16. Raman excitation spectroscopy of carbon nanotubes: effects of pressure medium and pressure
  17. Testing the Limits of Small Scale Plasticity with Thin Wires in Torsion
  18. Micromechanical testing with microstrain resolution
  19. Raman G‐mode of single‐wall carbon nanotube bundles under pressure
  20. High-pressure studies of carbon nanotubes
  21. Elastic Limit and Strain Hardening of Thin Wires in Torsion
  22. RamanGandDband in strongly photoexcited carbon nanotubes
  23. G‐mode behaviour of closed ended single wall carbon nanotubes under pressure
  24. High-pressure Raman response of single-walled carbon nanotubes: Effect of the excitation laser energy
  25. Raman G band in double-wall carbon nanotubes combining p doping and high pressure
  26. Quantum molecular dynamics study of the pressure dependence of the ammonia inversion transition
  27. Solvation pressure in ethanol by molecular dynamics simulations
  28. Effect of chemical environment on high-pressure Raman response of single-walled carbon nanotubes
  29. High pressure Raman spectroscopy of single-walled carbon nanotubes: Effect of chemical environment on individual nanotubes and the nanotube bundle
  30. Nanoscale pressure effects in individual double-wall carbon nanotubes
  31. Solvation pressure in chloroform
  32. Determination of ordering effects on GaInP pressure coefficients
  33. III-V semiconductors solve mechanical riddle
  36. Solvation pressure as real pressure: I. Ethanol and starch under negative pressure
  37. Accurate determination of (AlxGa1–x)0.5In0.5P alloy pressure coefficients
  38. Measurement and interpretation of strain by high-resolution X-ray diffraction
  39. High Pressure Instrumentation: Low and Negative Pressures
  40. A Theory of Non-Linear Elasticity Compatible With the Murnaghan Equation of State
  41. Determination of the Mode Grüneisen Parameter of AlN using different Fits on Experimental High Pressure Data
  42. Photoluminescence of (111) In x Ga 1 − x As / GaAs strained-layer quantum wells under hydrostatic pressure
  43. Theory of the Anomalous Low Band-Gap Pressure Coefficients of Semiconductor Strained Layers
  44. Theory of the anomalously low band-gap pressure coefficients in strained-layer semiconductor alloys
  45. Zen diamond-anvil low-pressure cell
  46. Carbon nanotubes: From molecular to macroscopic sensors
  47. Identity of molecular and macroscopic pressure on carbon nanotubes
  48. Coherency Strain and a New Yield Criterion
  49. Control of plasticity with coherency strain
  50. Investigations of Semiconductor Band Structure Using High Pressure.
  51. Experimental Techniques in the Diamond Anvil Cell
  52. Comparability and Reliability of High-Pressure Band-Gap Data in Tetrahedral Semiconductors
  53. Raman spectroscopy of GaAs and InGaAs under pressure
  54. Comparability and Reliability of High-Pressure Band-Gap Data in Tetrahedral Semiconductors
  55. Pressure dependence of the direct band gap in tetrahedral semiconductors
  56. Raman and absorption spectroscopy of InP under high pressure
  57. Combined Raman and transmission spectroscopy of ZnTe under pressure
  58. High Pressure Techniques in Chemistry and Physics: A Practical Approach
  59. Coherency Strain as an Athermal Strengthening Mechanism
  60. Determination of the Linear Pressure Coefficients of Semiconductor Bandgaps
  61. High Pressure Experimental Methods
  62. Mathematical model for strain relaxation in multilayer metamorphic epitaxial structures
  63. Pressure dependence of the photoluminescence of strained (001) and (111) In x Ga 1 − x As quantum wells
  64. Coherency Strain and High Strength at High Temperature
  65. Strain and interdiffusion in semiconductor heterostructures
  66. Plastic relaxation of metamorphic single layer and multilayer InGaAs/GaAs structures
  67. Excited-state excitons in strained quantum wells under pressure
  68. Electronic structure of (In,Ga) As(Ga, Al) As strained-layer quantum wells
  69. Interdiffusion in InGaAs/GaAs quantum well structures as a function of depth
  70. Recent Developments in Diamond-Anvil Cells
  71. Applications of Diamond-Anvil Cells to Materials Science
  72. Strain in semiconductor structures and devices
  73. Plastic relaxation of InGaAs grown on GaAs
  74. Investigation of the band structure of the strained systems InGaAs/GaAs and InGaAs/AIGaAs by high-pressure photoluminescence
  75. High-pressure investigation of GaSb and Ga 1 − x In x Sb/GaSb quantum wells
  76. Analysis and design of low-dimensional structures and devices using strain: II. Strained layer systems
  77. Analysis and design of low-dimensional structures and devices using strain: I. Hydrostatic pressure effects
  78. Thermal quenching of the photoluminescence of InGaAs/GaAs and InGaAs/AlGaAs strained-layer quantum wells
  79. Hydrostatic pressure coefficients of the photoluminescence of In x Ga 1 − x As/GaAs strained-layer quantum wells
  80. Miniature cryogenic diamond anvil cell
  81. Magneto-optical studies of CdTe/CdMnTe semimagnetic semiconductor superlattices under high pressure
  82. CdTe/ZnTe strained layer superlattices under high pressure
  83. The pressure dependence of the valence band discontinuity in quantum well structures
  84. Theory of the gasket in diamond anvil high-pressure cells
  85. The technology of diamond anvil high-pressure cells: II. Operation and use
  86. Technology of diamond anvil high-pressure cells: I. Principles, design and construction
  87. Electronic structure of cadmium-telluride – zinc-telluride strained-layer superlattices under pressure
  88. The pressure dependence of methyl tunnelling in MDBP from field-cycling NMR spectroscopy
  89. Hydrostatic pressure dependence of CdTe
  90. Diamond anvil cell high-pressure techniques for semiconductor research
  91. Pressure dependence of the valence-band discontinuity in GaAs/AlAs and GaAs/ Al x Ga 1 − x As quantum-well structures
  92. The pressure dependence of the photoluminescence intensity in hydrogenated amorphous silicon
  93. Hydrostatic and uniaxial pressure coefficients of CdTe
  94. The hydrostatic pressure dependence of the band-edge photoluminescence of GaInAs
  95. Miniature cryogenic diamond-anvil high-pressure cell
  96. The pressure dependence of the band offsets in a GaInAs/InP multiple quantum well structure
  97. On the preparation dependence of the Staebler-Wronski effect in a-Si:H
  98. Photoluminescence in hydrogenated amorphous silicon
  99. Geminate and distant-pair recombination in amorphous silicon: The metastable excited carrier population
  100. Luminescence and magnetic resonance in post-hydrogenated microcrystalline silicon
  101. Kinetics of distant-pair recombination: Application to amorphous silicon
  102. Non-geminate recombination in amorphous silicon