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  1. Cutoff frequency increase of gate recessed AlGaN/GaN MISHFETs with amorphous AlN insulator

    Article • AIP Advances, February 2025, American Institute of Physics

    Dagmar Gregusova

  2. Controlling surface/interface states in GaN-based transistors: Surface model, insulated gate, and surface passivation

    Article • Journal of Applied Physics, March 2021, American Institute of Physics

    Assoc. Prof. Zenji Yatabe, Dagmar Gregusova