All Stories

  1. Voltage Balancing of Series Connected Clamping Diodes in Medium Voltage NPC Converter enabled by Gen-3 10 kV SiC MOSFETs for Asynchronous Micro-Grid Power Conditioning System (AMPCS)

    Article • September 2019, Institute of Electrical & Electronics Engineers (IEEE)

    Ashish Kumar

  2. Avalanche Ruggedness Characterization of 10 kV 4H-SiC MOSFETs

    Article • Materials Science Forum, July 2019, Trans Tech Publications

    Ashish Kumar, Satyaki Ganguly

  3. Asynchronous Microgrid Power Conditioning System Enabled by Series Connection of Gen-3 SiC 10 kV MOSFETs

    Article • October 2018, Institute of Electrical & Electronics Engineers (IEEE)

    Ashish Kumar

  4. Protection Design Considerations of a 10 kV SiC MOSFET Enabled Mobile Utilities Support Equipment Based Solid State Transformer (MUSE-SST)

    Article • October 2018, Institute of Electrical & Electronics Engineers (IEEE)

    Ashish Kumar

  5. Continuous Heat Run Test of Latest Generation Power Modules for 10 kV 4H-SiC MOSFETs in Medium Voltage Power Converters

    Article • September 2018, Institute of Electrical & Electronics Engineers (IEEE)

    Ashish Kumar

  6. Qualification of Gate drivers for Operation of High Voltage SiC MOSFETs and IGBTs

    Article • June 2018, Institute of Electrical & Electronics Engineers (IEEE)

    Ashish Kumar

  7. High Power Medium Voltage Converters Enabled by High Voltage SiC Power Devices

    Article • May 2018, Institute of Electrical & Electronics Engineers (IEEE)

    Ashish Kumar

  8. Ruggedness of 6.5 kV, 30 a SiC MOSFETs in extreme transient conditions

    Article • May 2018, Institute of Electrical & Electronics Engineers (IEEE)

    Ashish Kumar

  9. Single shot avalanche energy characterization of 10kV, 10A 4H-SiC MOSFETs

    Article • March 2018, Institute of Electrical & Electronics Engineers (IEEE)

    Ashish Kumar

  10. An intelligent medium voltage gate driver with enhanced short circuit protection scheme for 10kV 4H-SiC MOSFETs

    Article • October 2017, Institute of Electrical & Electronics Engineers (IEEE)

    Ashish Kumar

  11. Effect of capacitive current on reverse recovery of body diode of 10kV SiC MOSFETs and external 10kV SiC JBS diodes

    Article • October 2017, Institute of Electrical & Electronics Engineers (IEEE)

    Ashish Kumar

  12. Design and fabrication of switching characterization set-up for GaN FETs

    Article • December 2016, Institute of Electrical & Electronics Engineers (IEEE)

    Ashish Kumar

  13. Power electronic converter for characterization of hall-effect current sensors

    Article • December 2014, Institute of Electrical & Electronics Engineers (IEEE)

    Ashish Kumar