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  1. Comparison of the Effects of Electron and Proton Irradiation on 4H-SiC and Si Device Structures
  2. Effect of Electron Irradiation on Electrical and Electroluminescent Properties of n+p 4H-SiC Structures
  3. Effect of Neutron Irradiation on Current-Voltage Characteristics of Packaged Diodes Based on 6H-SiC pn Structures
  4. Anomalous Scatter of Forward Current-Voltage Characteristics of He+-Irradiated Ni/4H-SiC Schottky Diodes
  5. 15 eV Protons Irradiation of the GaN Schottky Diodes
  6. Recombination Processes in 4H-SiC pn Structures
  7. Features of the Band-Edge Injection Electroluminescence in 4H-SiC pn Structures
  8. Characterization of 4H-SiC pn Structures with Unstable Excess Current