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  1. Morphology dependence of ZnO nanorod luminescence
  2. Study of single-layer stacking faults in 4H–SiC by deep level transient spectroscopy
  3. Hydrogen plasma treatment of β-Ga2O3: Changes in electrical properties and deep trap spectra
  4. Defects at the surface of β-Ga2O3 produced by Ar plasma exposure
  5. Deep trap spectra of Sn-doped α-Ga2O3 grown by halide vapor phase epitaxy on sapphire
  6. Deep traps and persistent photocapacitance in β-(Al0.14 Ga0.86)2O3/Ga2O3 heterojunctions
  7. Recombination Processes in 4H-SiC pn Structures
  8. Characterization of Si Convertors of Beta-Radiation in the Scanning Electron Microscope
  9. Spatial Distribution of the Dislocation Trails in Silicon
  10. Characterization of 4H-SiC pn Structures with Unstable Excess Current