All Stories

  1. Terahertz Emitters and Detectors Made on High-Resistivity InGaAsP:Fe Photoconductors

    Article • IEEE Transactions on Terahertz Science and Technology, January 2016, Institute of Electrical & Electronics Engineers (IEEE)

    André Fekecs

  2. Microstructural evolution of a recrystallized Fe-implanted InGaAsP/InP heterostructure (Phys. Status Solidi A 9∕2015)

    Article • physica status solidi (a), September 2015, Wiley

    André Fekecs

  3. Critical process temperatures for resistive InGaAsP/InP heterostructures heavily implanted by Fe or Ga ions

    Article • Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms, September 2015, Elsevier

    André Fekecs

  4. Microstructural evolution of a recrystallized Fe-implanted InGaAsP/InP heterostructure

    Article • physica status solidi (a), March 2015, Wiley

    André Fekecs

  5. Towards semi-insulating InGaAsP/InP layers by post-growth processing using Fe ion implantation and rapid thermal annealing

    Article • Journal of Physics D Applied Physics, April 2013, Institute of Physics Publishing

    André Fekecs

  6. Critical comparison of carrier lifetime at 1.55 µm of ion-irradiated InGaAs, cold-implanted InGaAsP, and ErAs:GaAs

    Article • September 2012, Institute of Electrical & Electronics Engineers (IEEE)

    André Fekecs

  7. Fabrication of high resistivity cold-implanted InGaAsP photoconductors for efficient pulsed terahertz devices

    Article • Optical Materials Express, October 2011, Optical Society of America (OSA)

    André Fekecs

  8. Characteristics of Terahertz Antenna Pulsed Sources Made on Fe-Implanted InGaAsP/InP Photoconductive Materials

    Article • January 2011, Optical Society of America (OSA)

    André Fekecs

  9. Full-wafer thermal imaging in ultrahigh epitaxy tools

    Article • June 2010, SPIE

    André Fekecs

  10. An empirical model for high yield manufacturing of 10Gb/s negative chirp InP Mach-Zehnder modulators

    Article • January 2005, Institute of Electrical & Electronics Engineers (IEEE)

    André Fekecs

  11. High performance directly modulated lasers: device physics

    Article • July 2003, SPIE

    André Fekecs

  12. A new method for measuring time-resolved frequency chirp of high bit rate sources

    Article • IEEE Photonics Technology Letters, March 2003, Institute of Electrical & Electronics Engineers (IEEE)

    André Fekecs

  13. Compact asymmetric strongly gain-coupled DFB laser array with integrated BFM array for simultaneous 4-λ 2.5 Gb/s 100 km WDM transmission

    Article • Journal of Lightwave Technology, January 1999, Institute of Electrical & Electronics Engineers (IEEE)

    André Fekecs

  14. Compact strongly gain-coupled DFB laser array with integrated BFMA arrays for simultaneous 4-λ 2.5 Gb/s 100-km WDM transmission

    Article • December 1998, SPIE

    André Fekecs

  15. 1.55 [micro sign]m transmission at 2.5 Gbit/s over 1102 km of NDSF using discrete and monolithically integrated InGaAsP/InP Mach-Zehnder modulator and DFB laser

    Article • Electronics Letters, January 1998, the Institution of Engineering and Technology (the IET)

    André Fekecs

  16. Photonics Applied to Phased Array Antennas: Work Done at Université Laval

    Article • January 1995, Springer Science + Business Media

    André Fekecs

  17. Receiver sensitivity enhancement with III-V Mach-Zehnder modulator employed in OC-48 transmitter over 600 km

    Article • Institute of Electrical & Electronics Engineers (IEEE)

    André Fekecs

  18. Optically-driven C-band active phased array antenna test bed using laser heterodyne, optically amplified signal distribution, and microwave oscillator injection-locking

    Article • Institute of Electrical & Electronics Engineers (IEEE)

    André Fekecs

  19. 20 Gbit/s directly modulated 1310 nm ridge laser

    Article • Institute of Electrical & Electronics Engineers (IEEE)

    André Fekecs