All Stories

  1. Spatial and temporal thermal management of a spintronic terahertz emitter

    Article • Applied Physics Express, August 2024, Institute of Physics Publishing

    Prof Denis Morris

  2. Monolithic compact terahertz emitter and detector

    Article • September 2023, Institute of Electrical & Electronics Engineers (IEEE)

    Prof Denis Morris

  3. Thermal strain relaxation of GaAs overgrown on nanovoid based Ge/Si substrate

    Article • Journal of Crystal Growth, September 2023, Elsevier

    Prof Denis Morris

  4. Experimental evidence for spin–triplet states in Titanium implanted AlN film: An electron spin resonance study

    Article • Physica B Condensed Matter, April 2023, Elsevier

    Prof Denis Morris

  5. Ultrafast Heat Transfer at the Nanoscale: Controlling Heat Anisotropy

    Article • ACS Photonics, March 2023, American Chemical Society (ACS)

    Prof Denis Morris

  6. Design, Simulation and Optimization of an Enhanced Vertical GaN Nanowire Transistor on Silicon Substrate for Power Electronic Applications

    Article • IEEE Access, January 2023, Institute of Electrical & Electronics Engineers (IEEE)

    Prof Denis Morris

  7. Room-Temperature Strong Coupling for CsPbBr3 Quantum Dots and Porous-Silicon Cavities: Cavity-detuning Control and Polariton Redundancy

    Article • January 2023, Optical Society of America (OSA)

    Prof Denis Morris

  8. Parallel generation and coding of a terahertz pulse train

    Article • APL Photonics, November 2022, American Institute of Physics

    Prof Denis Morris

  9. Design and Optimization of New Enhanced Vertical GaN Nanowire Transistor Using Sentaurus TCAD for Power Applications

    Article • June 2022, Institute of Electrical & Electronics Engineers (IEEE)

    Prof Denis Morris

  10. Growth of Si-doped GaN Nanowires With Low Density For Power Device Applications

    Article • June 2022, Institute of Electrical & Electronics Engineers (IEEE)

    Prof Denis Morris

  11. Characterization of a terahertz pulse train generation and modulation source

    Article • May 2022, Institute of Electrical & Electronics Engineers (IEEE)

    Prof Denis Morris

  12. Parallel generation and coding of a terahertz pulse train

    Article • March 2022, Research Square

    Prof Denis Morris

  13. Experimental Evidence for Spin-Triplet States in Titanium Implanted Aln Film: An Electron Spin Resonance Study

    Article • SSRN Electronic Journal, January 2022, Elsevier

    Prof Denis Morris

  14. Ultrafast photocarrier dynamics in Fe-implanted InGaAs polycrystalline photoconductive materials

    Article • Journal of Physics Condensed Matter, July 2021, Institute of Physics Publishing

    Prof Denis Morris

  15. Engineering visible light emitting point defects in Zr-implanted polycrystalline AlN films

    Article • Journal of Applied Physics, December 2020, American Institute of Physics

    Prof Denis Morris

  16. O-Band Emitting InAs Quantum Dots Grown by MOCVD on a 300 mm Ge-Buffered Si (001) Substrate

    Article • Nanomaterials, December 2020, MDPI AG

    Prof Denis Morris

  17. Improved two-temperature modeling of ultrafast thermal and optical phenomena in continuous and nanostructured metal films

    Article • October 2020, American Physical Society (APS)

    Prof Denis Morris

  18. Terahertz photoconductivity and photocarrier dynamics in graphene–mesoporous silicon nanocomposites

    Article • September 2020, American Physical Society (APS)

    Prof Denis Morris

  19. Structural, optical and terahertz properties of graphene-mesoporous silicon nanocomposites

    Article • Nanoscale Advances, January 2020, Royal Society of Chemistry

    Prof Denis Morris

  20. Revisiting Pressure-Induced Transitions in Mesoporous Anatase TiO2

    Article • The Journal of Physical Chemistry C, September 2019, American Chemical Society (ACS)

    Prof Denis Morris

  21. Phase control algorithms and filamentation of ultrashort laser pulses in a scattering medium

    Article • Applied Physics B Photophysics and Laser Chemistry, October 2018, Springer Science + Business Media

    Prof Denis Morris

  22. Natural metamaterial behavior across the phase transition for WxV1−xO2 films revealed by terahertz spectroscopy

    Article • Acta Materialia, November 2017, Elsevier

    Prof Denis Morris

  23. Fabrication and characterization of Langmuir-Blodgett organic films for nonlinear optical device applications

    Article • August 2017, SPIE

    Prof Denis Morris

  24. Ultrafast optical properties of doped InAs/GaAs self-assembled quantum dots

    Article • August 2017, SPIE

    Prof Denis Morris

  25. A dynamically reconfigurable terahertz array antenna for 2D-imaging applications

    Article • June 2017, Institute of Electrical & Electronics Engineers (IEEE)

    Prof Denis Morris

  26. Tunable Emission Wavelength Stacked InAs/GaAs Quantum Dots by Chemical Beam Epitaxy for Optical Coherence Tomography

    Article • Materials, June 2016, MDPI AG

    Prof Denis Morris

  27. Effect of Dot-Height Truncation on the Device Performance of Multilayer InAs/GaAs Quantum Dot Solar Cells

    Article • IEEE Journal of Photovoltaics, March 2016, Institute of Electrical & Electronics Engineers (IEEE)

    Prof Denis Morris

  28. Photonic biosensor based on photocorrosion of GaAs/AlGaAs quantum heterostructures for detection of Legionella pneumophila

    Article • Biointerphases, February 2016, American Vacuum Society

    Prof Denis Morris

  29. In-situheight engineering of InGaAs / GaAs quantum dots by chemical beam epitaxy

    Article • Journal of Nanophotonics, February 2016, SPIE

    Prof Denis Morris

  30. In-situheight engineering of InGaAs / GaAs quantum dots by chemical beam epitaxy

    Article • Journal of Nanophotonics, February 2016, SPIE

    Prof Denis Morris

  31. Terahertz Emitters and Detectors Made on High-Resistivity InGaAsP:Fe Photoconductors

    Article • IEEE Transactions on Terahertz Science and Technology, January 2016, Institute of Electrical & Electronics Engineers (IEEE)

    André Fekecs, Prof Denis Morris

  32. Thermally activated inter-dots carriers' transfer in InAs QDs with InGaAs underlying layer: Origin and dependence on the post-growth intermixing

    Article • Journal of Alloys and Compounds, January 2016, Elsevier

    Prof Denis Morris

  33. Critical process temperatures for resistive InGaAsP/InP heterostructures heavily implanted by Fe or Ga ions

    Article • Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms, September 2015, Elsevier

    André Fekecs, Prof Denis Morris

  34. Microstructural evolution of a recrystallized Fe-implanted InGaAsP/InP heterostructure

    Article • phys stat sol (a), March 2015, Wiley

    André Fekecs, Prof Denis Morris

  35. Impact ofn-type doping on the carrier dynamics of silicon nanowires studied using optical-pump terahertz-probe spectroscopy

    Article • Physical Review B, March 2014, American Physical Society (APS)

    Prof Denis Morris

  36. Carriers' localization and thermal redistribution in post growth voluntarily tuned quantum dashes' size/composition distribution

    Article • Journal of Luminescence, January 2014, Elsevier

    Prof Denis Morris

  37. Chemical beam epitaxy growth and optimization of InAs/GaAs quantum dot multilayers

    Article • Journal of Crystal Growth, December 2013, Elsevier

    Prof Denis Morris

  38. Low-loss low-dispersive high-resistivity silicon dielectric slab waveguide for THz region

    Article • June 2013, Institute of Electrical & Electronics Engineers (IEEE)

    Prof Denis Morris

  39. Black germanium produced by inductively coupled plasma etching

    Article • Materials Letters, March 2013, Elsevier

    Prof Denis Morris

  40. Critical comparison of carrier lifetime at 1.55 µm of ion-irradiated InGaAs, cold-implanted InGaAsP, and ErAs:GaAs

    Article • September 2012, Institute of Electrical & Electronics Engineers (IEEE)

    André Fekecs, Prof Denis Morris

  41. Formation and morphological evolution of InAs quantum dots grown by chemical beam epitaxy

    Article • Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena, August 2012, American Vacuum Society

    Prof Denis Morris

  42. CATHODOLUMINESCENCE AND PHOTOLUMINESCENCE OF NV CENTERS

    Article • International Journal of Nanoscience, August 2012, World Scientific Pub Co Pte Lt

    Prof Denis Morris

  43. Near-infrared light sensitive polypeptide block copolymer micelles for drug delivery

    Article • Journal of Materials Chemistry, January 2012, Royal Society of Chemistry

    Prof Denis Morris

  44. Fabrication of high resistivity cold-implanted InGaAsP photoconductors for efficient pulsed terahertz devices

    Article • Optical Materials Express, October 2011, Optical Society of America (OSA)

    André Fekecs, Prof Denis Morris

  45. The impact of etched trenches geometry and dielectric material on the electrical behaviour of silicon-on-insulator self-switching diodes

    Article • Nanotechnology, October 2011, Institute of Physics Publishing

    Prof Denis Morris

  46. Temperature Dependent Photoluminescence Properties of InAs/InP Quantum Dashes Subjected to Low Energy Phosphorous Ion Implantation and Subsequent Annealing

    Article • Journal of Nanoscience and Nanotechnology, October 2011, American Scientific Publishers

    Prof Denis Morris

  47. Improved detection sensitivity of D-mannitol crystalline phase content using differential spectral phase shift terahertz spectroscopy measurements

    Article • Optics Express, February 2011, Optical Society of America (OSA)

    Prof Denis Morris

  48. Characteristics of Terahertz Antenna Pulsed Sources Made on Fe-Implanted InGaAsP/InP Photoconductive Materials

    Article • January 2011, Optical Society of America (OSA)

    André Fekecs, Prof Denis Morris

  49. Photoexcited carrier relaxation dynamics and terahertz response of photoconductive antennas made on proton bombarded GaAs materials

    Article • Journal of Applied Physics, December 2010, American Institute of Physics

    Prof Denis Morris

  50. Impact of ion-implantation-induced band gap engineering on the temperature-dependent photoluminescence properties of InAs/InP quantum dashes

    Article • Journal of Applied Physics, July 2010, American Institute of Physics

    Prof Denis Morris

  51. Persistence of In/Ga intermixing beyond the emission energy blueshift saturation of proton-implanted InAs/GaAs quantum dots

    Article • Journal of Applied Physics, June 2010, American Institute of Physics

    Prof Denis Morris

  52. High resolution imaging of InAs/InP single quantum dots by low-voltage cathodoluminescence

    Article • May 2009, Institute of Electrical & Electronics Engineers (IEEE)

    Prof Denis Morris

  53. Fabrication and THz loss measurements of porous subwavelength fibers using a directional coupler method

    Article • Optics Express, April 2009, Optical Society of America (OSA)

    Prof Denis Morris

  54. A New Two‐Photon‐Sensitive Block Copolymer Nanocarrier

    Article • Angewandte Chemie, April 2009, Wiley

    Prof Denis Morris

  55. Two-photon absorption cross section of excited phthalocyanines by a femtosecond Ti-sapphire laser

    Article • Photochemical & Photobiological Sciences, March 2009, Springer Science + Business Media

    Prof Denis Morris

  56. Intermixing of InAs/GaAs quantum dots by proton implantation and rapid thermal annealing

    Article • Materials Science in Semiconductor Processing, February 2009, Elsevier

    Prof Denis Morris

  57. Carrier transport properties in the vicinity of single self-assembled quantum dots determined by low-voltage cathodoluminescence imaging

    Article • Applied Physics Letters, January 2009, American Institute of Physics

    Prof Denis Morris

  58. Inhomogeneous broadening and alloy intermixing in low proton dose implanted InAs/GaAs self-assembled quantum dots

    Article • Nanotechnology, June 2008, Institute of Physics Publishing

    Prof Denis Morris

  59. Optical investigation of phosphorous-ion-implantation induced InAs/GaAs quantum dots' intermixing

    Article • Physics Letters A, June 2008, Elsevier

    Prof Denis Morris

  60. Influence of surface reconstructions on the shape of InAs quantum dots grown on InP(001)

    Article • May 2008, Institute of Electrical & Electronics Engineers (IEEE)

    Prof Denis Morris

  61. Electrical characteristics and simulations of self-switching-diodes in SOI technology

    Article • Solid-State Electronics, September 2007, Elsevier

    Prof Denis Morris

  62. Detection of explosives using THz time domain spectroscopy

    Article • June 2007, SPIE

    Prof Denis Morris

  63. Generation of High-Power Terahertz Pulses at the Advanced Laser Light Source (ALLS)

    Article • May 2007, Institute of Electrical & Electronics Engineers (IEEE)

    Prof Denis Morris

  64. High-Power Terahertz Pulses at the Advanced Laser Light Source (ALLS) Laboratory

    Article • January 2007, Optical Society of America (OSA)

    Prof Denis Morris

  65. First Report on Self-Switching-Diodes in SOI

    Article • October 2006, Institute of Electrical & Electronics Engineers (IEEE)

    Prof Denis Morris

  66. Terahertz Radiation from YBa<sub>2</sub>Cu<sub>3</sub>O<sub>7-δ</sub> Thin Film Antenna on LaAlO<sub>3</sub> Substrate

    Article • September 2006, Institute of Electrical & Electronics Engineers (IEEE)

    Prof Denis Morris

  67. Post-growth engineering of InAs/GaAs quantum dots’ band-gap using proton implantation and annealing

    Article • Nanotechnology, June 2006, Institute of Physics Publishing

    Prof Denis Morris

  68. Toward Photocontrolled Release Using Light-Dissociable Block Copolymer Micelles

    Article • Macromolecules, May 2006, American Chemical Society (ACS)

    Prof Denis Morris

  69. Terahertz emission properties of arsenic and oxygen ion-implanted GaAs based photoconductive pulsed sources

    Article • Journal of Vacuum Science & Technology A Vacuum Surfaces and Films, May 2006, American Vacuum Society

    Prof Denis Morris

  70. Improved characteristics of a terahertz set-up built with an emitter and a detector made on proton-bombarded GaAs photoconductive materials

    Article • Semiconductor Science and Technology, January 2006, Institute of Physics Publishing

    Prof Denis Morris

  71. Band gap tuning of InAs∕InP quantum sticks using low-energy ion-implantation-induced intermixing

    Article • Applied Physics Letters, December 2005, American Institute of Physics

    Prof Denis Morris

  72. Pulsed photoconductive antenna terahertz sources made on ion-implanted GaAs substrates

    Article • Journal of Physics Condensed Matter, November 2005, Institute of Physics Publishing

    Prof Denis Morris

  73. Ion channeling effects on quantum well intermixing in phosphorus-implanted InGaAsP∕InGaAs∕InP

    Article • Journal of Applied Physics, September 2005, American Institute of Physics

    Prof Denis Morris

  74. Assessment of the spectral interference method applied to the stretching measurement of diffused laser pulses

    Article • Journal of Optics A Pure and Applied Optics, March 2005, Institute of Physics Publishing

    Prof Denis Morris

  75. High-performance terahertz source using ion implanted photoconductive antenna

    Article • March 2005, SPIE

    Prof Denis Morris

  76. Dynamics of photo-excited carriers in self-assembled quantum dots

    Article • February 2003, SPIE

    Prof Denis Morris

  77. Low-energy ion-implantation-induced quantum-well intermixing

    Article • IEEE Journal of Selected Topics in Quantum Electronics, July 2002, Institute of Electrical & Electronics Engineers (IEEE)

    Prof Denis Morris

  78. Magneto–photoluminescence study of intermixed self-assembled InAs/GaAs quantum dots

    Article • Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena, July 2002, American Vacuum Society

    Prof Denis Morris

  79. <title>Low-energy ion implantation-induced control of InP-based heterostructure properties</title>

    Article • December 2001, SPIE

    Prof Denis Morris

  80. Optical propeties of In 1-x GaxAs y P 1-y multiple quantum well heterostructure lasers

    Article • December 2000, SPIE

    Prof Denis Morris

  81. Origin of the inhomogenous broadening and alloy intermixing in InAs/GaAs self-assembled quantum dots

    Article • Physical Review B, August 2000, American Physical Society (APS)

    Prof Denis Morris

  82. Carrier capture and relaxation in Stranski-KrastanowInx

    Article • Physical Review B, July 2000, American Physical Society (APS)

    Prof Denis Morris

  83. Controlling the optical transition linewidth of a self-assembled quantum dot ensemble

    Article • January 2000, Institute of Electrical & Electronics Engineers (IEEE)

    Prof Denis Morris

  84. Carrier energy relaxation by means of Auger processes in InAs/GaAs self-assembled quantum dots

    Article • Applied Physics Letters, December 1999, American Institute of Physics

    Prof Denis Morris

  85. Fabrication of silicide structures by silicidedirect-write electron-beam lithography process(SiDWEL) on thin silicon nitride membranes and on tantalum substrates

    Article • Electronics Letters, November 1999, the Institution of Engineering and Technology (the IET)

    Prof Denis Morris

  86. Photoluminescence study of carrier dynamics and recombination in a strained InGaAsP/InP multiple-quantum-well structure

    Article • Journal of Applied Physics, September 1999, American Institute of Physics

    Prof Denis Morris

  87. Carrier dynamics in InGaAsP MQW laser structures

    Article • December 1998, SPIE

    Prof Denis Morris

  88. Time-resolved spectroscopy of irradiated n-GaAs

    Article • IEEE Transactions on Nuclear Science, December 1997, Institute of Electrical & Electronics Engineers (IEEE)

    Prof Denis Morris

  89. Electron–electron inter-subband scattering in GaAs quantum wells

    Article • Canadian Journal of Physics, December 1996, Canadian Science Publishing

    Prof Denis Morris

  90. Quantum-mechanical versus semiclassical capture and transport properties in quantum well laser structures

    Article • Optical and Quantum Electronics, July 1994, Springer Science + Business Media

    Prof Denis Morris

  91. Ultrafast relaxation of photoexcited carriers in quantum wells and superlattices

    Article • Semiconductor Science and Technology, May 1994, Institute of Physics Publishing

    Prof Denis Morris

  92. Ultrafast dynamics of intersubband relaxation in GaAs quantum wells: hot carrier and phonon populations effects

    Article • Superlattices and Microstructures, April 1994, Elsevier

    Prof Denis Morris

  93. Low-temperature photoluminescence study of Cd1−xMnxTe films grown by pulsed laser evaporation and epitaxy

    Article • Surface Science, September 1993, Elsevier

    Prof Denis Morris

  94. Ultrafast optical evidence for resonant electron capture in quantum wells

    Article • Physical Review B, April 1993, American Physical Society (APS)

    Prof Denis Morris

  95. Electron and hole capture in multiple-quantum-well structures

    Article • Physical Review B, March 1993, American Physical Society (APS)

    Prof Denis Morris

  96. Carrier capture in quantum wells

    Article • Solid State Communications, January 1993, Elsevier

    Prof Denis Morris

  97. Anisotropy in InGaAs/GaAs heterostructures grown by low-pressure MOVPE and CBE

    Article • Journal of Crystal Growth, May 1992, Elsevier

    Prof Denis Morris

  98. Structure property anisotropy in lattice-mismatched single heterostructures

    Article • Journal of Applied Physics, March 1992, American Institute of Physics

    Prof Denis Morris

  99. Effects of substrate misorientation on anisotropic electron transport in InGaAs/GaAs heterostructures

    Article • Applied Physics Letters, September 1991, American Institute of Physics

    Prof Denis Morris

  100. Electron minibands and Wannier-Stark quantization in anIn0.15...

    Article • Physical Review B, April 1990, American Physical Society (APS)

    Prof Denis Morris

  101. Optical and structural characterization of InGaAs/GaAs superlattices with increasing number of periods

    Article • Surface Science, April 1990, Elsevier

    Prof Denis Morris

  102. Magneto-photoluminescence of a quasi 2-D electron-hole gas in strained quantum wells

    Article • Superlattices and Microstructures, January 1990, Elsevier

    Prof Denis Morris

  103. The effects of substrate orientation on the optical properties of InGaAs epitaxial layers grown by low-pressure metal organic vapour-phase epitaxy

    Article • Canadian Journal of Physics, April 1989, Canadian Science Publishing

    Prof Denis Morris

  104. Binding energy of shallow acceptors inInx

    Article • Physical Review B, October 1988, American Physical Society (APS)

    Prof Denis Morris

  105. Photoluminescence study of strain relaxation in Ga1−xInxAs/GaAs single heterostructures

    Article • Journal of Applied Physics, October 1988, American Institute of Physics

    Prof Denis Morris

  106. Photoreflectance and Phototransmittance of Narrow Well Strained Layer In x Ga 1-x As/GaAs Coupled Multiple Quantum Well Structures

    Article • August 1988, SPIE

    Prof Denis Morris

  107. Photoreflectance study of narrow-well strained-layerInx

    Article • Physical Review B, August 1988, American Physical Society (APS)

    Prof Denis Morris

  108. Optical fiber probe to measure local void fraction profiles

    Article • Applied Optics, November 1987, Optical Society of America (OSA)

    Prof Denis Morris