Publication not explained

This publication has not yet been explained in plain language by the author(s). However, you can still read the publication.

If you are one of the authors, claim this publication so you can create a plain language summary to help more people find, understand and use it.

Featured Image

Read the Original

This page is a summary of: Improvement of Interface Properties by NH3 Pretreatment for 4H-SiC(000-1) MOS Structure, October 2009, Japan Society of Applied Physics,
DOI: 10.7567/ssdm.2009.j-3-2.
You can read the full text:

Read

Contributors

The following have contributed to this page