This shareable PDF can be hosted on any platform or network and is fully compliant with publisher copyright.
This publication has not yet been explained in plain language by the author(s). However, you can still read the publication.
If you are one of the authors, claim this publication so you can create a plain language summary to help more people find, understand and use it.
This page is a summary of: Electronic and optical characteristics of anm-plane GaN single crystal grown by hydride vapor phase epitaxy on a GaN seed synthesized by the ammonothermal method using an acidic mineralizer, Japanese Journal of Applied Physics, March 2016, Japan Society of Applied Physics,
DOI: 10.7567/jjap.55.05fa03.
You can read the full text:
The following have contributed to this page
