What is it about?
The defects in Mg doped GaN layers can be controlled by In-Mg codoping and the mechanisms are discussed.
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Why is it important?
We offered a new method to evaluate the concentration of nitrogen vacancies in Mg doped GaN layers. These method can also be used to evaluate other negative point defects in materials which is hard to be detected by other methods.
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This page is a summary of: Elimination of defects in In–Mg codoped GaN layers probed by strain analysis, Japanese Journal of Applied Physics, April 2014, Japan Society of Applied Physics,
DOI: 10.7567/jjap.53.060301.
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