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We demonstrate selective and controllable undercut etching of the InGaN/GaN multiple quantum well (MQW) active region of a (202 ̅1 ̅) laser diode (LD) structure by photoelectrochemical etching. This technique was used to fabricate current aperture edge-emitting blue laser diodes (CA-LDs) whose performance was compared with that of shallow etched ridge LDs with a nominally identical epitaxial structure. The performance of the CA-LD was better
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This page is a summary of: Continuous-wave operation of a $(20\bar{2}\bar{1})$ InGaN laser diode with a photoelectrochemically etched current aperture, Applied Physics Express, March 2015, Japan Society of Applied Physics,
DOI: 10.7567/apex.8.042701.
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