High-voltage GaN-on-Si hetero-junction FETs with reduced leakage and current collapse effects using SiN x surface passivation layer deposited by low pressure CVD

Sung-Woon Moon, Jongsub Lee, Deokwon Seo, Sungdal Jung, Hong Goo Choi, Heejae Shim, Jeong Soon Yim, John Twynam, Sungwon D. Roh
  • Japanese Journal of Applied Physics, July 2014, Japan Society of Applied Physics
  • DOI: 10.7567/jjap.53.08nh02

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http://dx.doi.org/10.7567/jjap.53.08nh02