Modification of Schottky Barrier Properties of Ti/p-type InP Schottky Diode by Polyaniline (PANI) Organic Interlayer

P.R. Sekhar Reddy, V. Janardhanam, I. Jyothi, Shim-Hoon Yuk, V. Rajagopal Reddy, Jae-Chan Jeong, Sung-Nam Lee, Chel-Jong Choi
  • JSTS Journal of Semiconductor Technology and Science, October 2016, The Institute of Electronics Engineers of Korea
  • DOI: 10.5573/jsts.2016.16.5.664

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http://dx.doi.org/10.5573/jsts.2016.16.5.664

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