What is it about?
This structure reduces the channel resistance in SiC power MOSFETs by increasing the current-carrying width of the channel without increasing the device area.
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Why is it important?
Channel resistance in SiC is the limiting resistance at blocking voltages below 1,700 V. This innovation reduces the resistance-area product, allowing a smaller die area for a given resistance rating. This allows more die per wafer, reducing cost.
Perspectives
This is the first demonstration of an important new device structure.
James Cooper
Sonrisa Research, Inc.
Read the Original
This page is a summary of: Vertical Tri-Gate Power MOSFETs in 4H-SiC, Materials Science Forum, June 2018, Trans Tech Publications,
DOI: 10.4028/www.scientific.net/msf.924.680.
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