tunnel oxide passivated contact fabricated by sputtering and ion implantation technique

What is it about?

Tunnel oxide passivated contact, a surface passivatition technology for high effeiciency silicon solar cell, requires the use of explosive SiH4 gas in the fabrication process. This study demonstrates the potential of facing target sputtering which is a SiH4 free process.

Featured Image

Why is it important?

Thisi is the first demonstration of tunnel oxide passivated contact fabricted by using sputtered intrinsic amorphous silicon and ion implantation technique.