What is it about?
A new generalized Einstein relation (a macroscopic equation and a formula) is derived from the semiclassical momentum balance equation based on a drift-diffusion approximation, by introducing a new concept of the effective temperature of a carrier gas for generalization of the classical kinetic theory for nonideal gases of carriers in semiconductors.
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Why is it important?
The currently used generalized Einstein relation for degenerate semiconductors with isotropic nonparabolic energy bands produces physically improper results, as well as losing numerical accuracy for large values of nonparabolicity parameters at room temperature. The proposed formula in this paper takes into account the carrier thermal energy diffusion effect completely, so that it can accurately reflect the effect of band nonparabolicity on the ratio of the diffusion coefficient to the mobility for carriers in degenerate semiconductors.
Perspectives
I hope that the article is helpful to researchers in the related area.
Professor Emeritus Jang Jyegal
Incheon National University
Read the Original
This page is a summary of: Thermal Energy Diffusion Incorporating Generalized Einstein Relation for Degenerate Semiconductors, Applied Sciences, July 2017, MDPI AG,
DOI: 10.3390/app7080773.
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