What is it about?
In the paper are considered the dislocation mechanisms and the normal mechnisms of growth. The most widely used techniques of liquid phase epitaxial growth are discussed - the supercooling, the equilibrium cooling and the step cooling tehniques. At all the treated mechanisms of growth and at all the growth techniques are given the change with time of the layer thickness, of the growth rate.
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Why is it important?
This investigation allows determining very important parameters of the growth process - the kinetics coefficinets, the times constants at the transitional regime of growth, the stationary grwoth rate, how the process carry out during the transition regime of growth and others. All the quantities may be determined at both considered mechanisms of growth and at the widely used liquid phase epitaxial growth techniques - the suoer cooling, the equilibrium cooling and the step cooling technique. The presented here theory of LPE gerowth is well confirmed by the experiments.
Perspectives
1) An assertained here times constant for the dislocation mechanism of growth must be deeper explained. 2) In the crystal growth theory another mechanism of crystallization may be introduced also.
Nikolay Peev
Acad. G. Nadjakov Institute of Solid State Physics, Bulgarian Academy of Sciences
Read the Original
This page is a summary of: Theory and experiments of liquid phase epitaxial growth Part 1, Journal of Research in Physics, June 2018, De Gruyter,
DOI: 10.2478/jrp-2018-0001.
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