What is it about?
Simulation studies on the modelling of fullerene channel based FET
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Why is it important?
For innovative device models and characteristics, a new channel based FET model needed towards the rise of the electronics arsenals.
Perspectives
Writing this article was a great pleasure as it has co-authors with whom I have had long standing collaborations.
Cyril Robinson Azariah John Chelliah
Karunya Institute of Technology and Sciences
Read the Original
This page is a summary of: Study of Electron Transport in Fullerene (C60) Quantum Confined Channel Layer Based Field Effect Transistor, International Journal of Advanced Engineering Research and Science, January 2017, AI Publications,
DOI: 10.22161/ijaers.4.4.16.
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