What is it about?
It demonstrated the thermal annealing influence on the emission characteristic of the n-GaN materials and GaN devices.
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Why is it important?
The defect on the surface of n-GaN materials and GaN LEDs caused by plasma dry etching by using an ICP reactor is strong related to the material and device behaviors.
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This page is a summary of: PL Intensity and Life-Time Enhancements of the n-GaN Light-Emitting Diode During the Device Fabrication, The Open Materials Science Journal, July 2016, Bentham Science Publishers,
DOI: 10.2174/1874088x01610010020.
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