What is it about?
Model deals with extraction of small signal parameters of double asymmetric double channel AlGaN/GaN HEMT using direct parameter extraction methodology.
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Why is it important?
Article describe one complete modeling approach for GaN based compound semiconductor device useful for microwave circuit design.
Perspectives
Double channel device can provide various advance features in GaN HEMTs that can help to improve overall device performances.
Dr. Rahis Kumar Yadav
Sharda University
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This page is a summary of: Small Signal Parameter Extraction and DCSimulation of Asymmetric Dual Channel AlGaN/GaN Heterojunction Field Effect Transistor, Indian Journal of Science and Technology, April 2017, Indian Society for Education and Environment,
DOI: 10.17485/ijst/2017/v10i16/111359.
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