What is it about?
This article describe analytical model of double channel AlGaN/GaN HEMT.
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Why is it important?
It is important to understand in double channel device the current collapse problem can be minimized.
Perspectives
The presence of double channels in the device minimize the current collapse problems, is accurately explained in our proposed model. The current collapse that occurs more in the top channel nearer to the gate, is subsidized by the current in bottom channel, hence minimizing overall current collapse in the device
Dr. Rahis Kumar Yadav
Sharda University
Read the Original
This page is a summary of: I-V CHARACTERISTICS AND TRANSCONDUCTANCE MODELING FOR DUAL CHANNEL ALGAN/GAN MODFETS, International Journal of Research in Engineering and Technology, June 2015, eSAT Publishing House,
DOI: 10.15623/ijret.2015.0406073.
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