Appearance of quantum point contact in Pt/NiO/Pt resistive switching cells

What is it about?

A resistive switching (RS) phenomenon, namely reversible transitions between the low and high resistance states after forming process, is caused by the formation and rupture of a conductive filament. We examine correlation between microscopic structures in NiO layers and forming characteristics in the Pt/NiO/Pt cells, and confirmed that conductive filaments including a quantum point contact (QPC) were formed by semiforming, the first step of the forming process.

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Why is it important?

Two kinds of forming process in Pt/NiO/Pt RS cells and conductive filaments including a quantum point contact (QPC) in the cells are unique. The appearance condition of quantum point contact (QPC) is considered to be associated with the composition ratio of O to Ni of either equivalent to or larger than a critical value. Our results can help to elucidate universal mechanism of RS.