Ti/Al- GaN Reaction Mechanism Forming Low Contact Resistivity

  • Yoshimichi Fukasawa, Tomonori Nakamura, Tohru Nakamura
  • MRS Proceedings, January 2002, Cambridge University Press
  • DOI: 10.1557/proc-743-l11.54

The authors haven't yet claimed this publication.

Read Publication

http://dx.doi.org/10.1557/proc-743-l11.54