What is it about?
It is all about better communications in the electronic devices, where the III-V semiconducting channels play a major role as channels in the MOSFETs. This paper is a detailed literature report on the various III-V semiconductors as MOSFET channels and how III-V nanostructures stands better in the revolution of changing the channel.
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Why is it important?
It is important for future devices, where we dream for Si free devices, with high gain and noise free communication and better storage arsenals.
Perspectives
We included a simulation by TCAD for nano thickness range gallium nitride channel based MOSFET along with a long literature reports on III-V devices which includes various channels and nanostructures and their contribution in MOSFET industry glimpse out the revolution of current trends in changing the channel.
Cyril Robinson Azariah John Chelliah
Karunya Institute of Technology and Sciences
Read the Original
This page is a summary of: Current trends in changing the channel in MOSFETs by III–V semiconducting nanostructures, Nanotechnology Reviews, November 2017, De Gruyter,
DOI: 10.1515/ntrev-2017-0155.
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