What is it about?
SnS thin films were grown on glass substrates by a simple route named successive ion layer adsorption and reaction (SILAR) method. The films were prepared using tin chloride as tin (Sn) source and ammonium sulfide as sulphur (S) source. The structural, optical and morphological study was done using XRD, FESEM, FT-IR and UV-Vis spectrophotometer. XRD measurement confirmed the presence of orthorhombic phase. Particle size estimated from XRD was about 45 nm which fitted well with the FESEM measurement. The value of band gap was about 1.63 eV indicating that SnS can be used as an important material for thin film solar cells. The surface morphology showed a smooth, homogenous film over the substrate. Characteristic stretching vibration mode of SnS was observed in the absorption band of FT-IR spectrum. The electrical activation energy was about 0.306 eV.
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Why is it important?
We prepare SnS thin film by SILAR method which is a very low cost usable large scale deposition process. We characterize the properties of the thin film.
Perspectives
SILAR method is being popular in modern day lagre scale thin film deposition. We have also used ammonium sulphide as sulphur source which is alos 1st of its kind.
Dr AYAN MUKHERJEE
The University of Burdwan
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This page is a summary of: Structural and optical characteristics of SnS thin film prepared by SILAR, Materials Science-Poland, January 2015, De Gruyter,
DOI: 10.1515/msp-2015-0118.
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