Inhomogeneous GaInNAs quantum wells: their properties and utilization for improving of p-i-n and p-n junction photodetectors

D. Pucicki
  • Materials Science-Poland, December 2017, De Gruyter
  • DOI: 10.1515/msp-2017-0110
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http://dx.doi.org/10.1515/msp-2017-0110

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