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We use terahertz spectroscopy to determine the amount of free charge carriers (e.g. electrons) in a thin epitaxial layer together with the amount of free charge carriers in its substrate - simultaneously, spatially resolved and contact-free. We demonstrate the technique for silicon carbide (SiC) epi-wafers, which are used widely in power electronics.

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This page is a summary of: Simultaneous charge carrier density mapping of SiC epilayers and substrates with terahertz time-domain spectroscopy, Optics Express, October 2025, Optical Society of America (OSA),
DOI: 10.1364/oe.570902.
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