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Why is it important?
This is the first study through experimental work on the changing amplifying properties of InAs APDs as infrared sensors and it provides insight for the design of InAs APDs.
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This page is a summary of: Temperature dependence of gain and excess noise in InAs electron avalanche photodiodes, Optics Express, December 2012, Optical Society of America (OSA),
DOI: 10.1364/oe.20.029568.
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