What is it about?
In this work, UV photodetectors have been fabricated by depositing silicon nitride nanoparticles on a p-type silicon substrate by closed-field unbalanced dual magnetron sputtering technique. UV-visible transmission and absorption spectra of the silicon nitride thin films have been recorded. The maximum spectral responsivities of these photodetectors have been measured.
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Why is it important?
The results show that these photodetectors have quantum efficiencies between 0.421-0.479, and specific detectivity up to 2.33x1011 cm.W-1.Hz-1 at 10 kHz. Accordingly, silicon nitride can be considered as applicable candidate for UV photodetectors.
Perspectives
Writing this article was a great pleasure as it has co-authors with whom I have had long standing collaborations.
Dr Oday A. Hammadi
Al-Iraqia University
Read the Original
This page is a summary of: Fabrication and characterization of ultraviolet photodetectors based on silicon nitride nanostructures prepared by magnetron sputtering, Proceedings of the Institution of Mechanical Engineers Part N Journal of Nanoengineering and Nanosystems, October 2015, SAGE Publications,
DOI: 10.1177/1740349915610600.
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