Point radiation defects in germanium
What is it about?
These defects, namely, group-V-impurity-vacancy complexes, play crucial role in degrading parameters of the germanium-based semiconductor devices (including detectors of the gamma-radiation) functioning in the conditions of irradiation by fast particles. These defects do not yield to studying by traditional methods of defects characterization such as EPR-, IR-spectroscopy and some others. We have applied the spectroscopy of the angular correlation of the electron-positron annihilation radiation (ACAR) and determined for the first time by the positron probing the configurational parameters of the abovementioned complexes in gamma-irradiated germanium.
Why is it important?
The knowledge of the configurational parameters of group-V-impurity-vacancy complexes (V=P, As, Sb, and Bi) is of paramount importance in determining the radiation resistance of the germanium-based devices of microelectronics and spintronics as well as in choosing the strategy in gettering and defect engineering in the semiconductor technology.
The following have contributed to this page: Dr. Nikolay Arutyunov