What is it about?
Modeling of compound semiconductor device named as DMG AlGaN/GaN HEMT.
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Why is it important?
Small signal circuit model for the DMG AlGaN/GaN HEMT is described with extraction methodology.
Perspectives
This article useful for device scientists and researchers.
Dr. Rahis Kumar Yadav
Sharda University
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This page is a summary of: TCAD Simulations and Small Signal Modeling of DMG AlGaN/GaN HFET, International Journal of Electrical and Computer Engineering (IJECE), August 2017, Institute of Advanced Engineering and Science,
DOI: 10.11591/ijece.v7i4.pp1839-1849.
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