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The next-generation nonvolatile memory architecture might use nanocrystals as their transistor floating gate to improve reliability. We study the process of temperature-induced phase separation in Ge-ZrO2 thin layers and find that it is possible to grow Germanium nanocrystals in a tetragonal ZrO2 matrix. The tetragonal ZrO2 phase offers enhanced permittivity as compared to the more common monoclinic phase.
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This page is a summary of: Ge Nanostructures Embedded in ZrO2 Dielectric Films for Nonvolatile Memory Applications, ECS Transactions, May 2015, The Electrochemical Society,
DOI: 10.1149/06604.0203ecst.
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