HfO2/Al2O3 Bilayered High-k Dielectric for Passivation and Gate Insulator in 4H-SiC Devices

M. Usman, C. Henkel, A. Hallen
  • ECS Journal of Solid State Science and Technology, July 2013, The Electrochemical Society
  • DOI: 10.1149/2.013308jss

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The following have contributed to this page: Dr. Muhammad Usman