HfO2/Al2O3 Bilayered High-k Dielectric for Passivation and Gate Insulator in 4H-SiC Devices

M. Usman, C. Henkel, A. Hallen
  • ECS Journal of Solid State Science and Technology, July 2013, The Electrochemical Society
  • DOI: 10.1149/2.013308jss

The authors haven't finished explaining this publication. If you are the author, sign in to claim or explain your work.

Read Publication

http://dx.doi.org/10.1149/2.013308jss

The following have contributed to this page: Dr. Muhammad Usman