Radiation Hardened and Leakage Power Attack Resilient 12T SRAM Cell for Secure Nuclear Environments

What is it about?

Extremely energetic particles prevalent in the nuclear environment make memory cells prone to soft errors. Also, attackers extract secret data of SRAM cells via side-channel attacks (SCAs) and leak- age power analysis attacks (LPAs) are a serious threat to security systems. This research indicates extremely effective radiation- hardened and LPA-resilient (RHLR12T) SRAM cell that is both radi- ation resistant by design for nuclear applications and LPA-resilient. It offers better speed, enhanced writing stability and higher overlap percentage compared to other considered SRAM cells, such as 6T, Quatro, We-Quatro, and RHMD10T, utilizing 45nm CMOS technol- ogy at the supply voltage of 1.0V and 27◦C operating temperature. The proposed cell gives 1.141× higher write stability, 1.55× lower write access time, 1.11× increased critical charge and 1.51× better overlap percentage than RHMD10T SRAM cell.

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