Performance Improvement of Partially Silicon-on-Insulator Lateral Double-Diffused Metal–Oxide–Semiconductor Field-Effect Transistors Using Doping-Engineered Drift Region

  • Ali Afzali-Kusha, Saeed Mohammadi
  • Japanese Journal of Applied Physics, September 2012, Japan Society of Applied Physics
  • DOI: 10.1143/jjap.51.101201

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http://dx.doi.org/10.1143/jjap.51.101201