Investigation and Fabrication of the Semiconductor Devices Based on Metamorphic InAlAs/InGaAs/InAlAs Nanoheterostructures for THz Applications

  • D. V. Lavrukhin, A. E. Yachmenev, R. R. Galiev, A. S. Bugaev, Y. V. Fedorov, R. A. Khabibullin, D. S. Ponomarev, P. P. Maltsev
  • International Journal of High Speed Electronics and Systems, March 2015, World Scientific Pub Co Pte Lt
  • DOI: 10.1142/s0129156415200013

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