Dependence of open circuit voltage in a-Si:H and μc-Si:H solar cells on defect density in absorber layer varied by 2 MeV electron bombardment 1

O. Astakhov, V. Smirnov, R. Carius, B.E. Pieters, Yu. Petrusenko, V. Borysenko, F. Finger
  • Canadian Journal of Physics, July 2014, Canadian Science Publishing
  • DOI: 10.1139/cjp-2013-0610

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http://dx.doi.org/10.1139/cjp-2013-0610