Temperature and bias dependence of hydrogenated amorphous silicon – crystalline silicon heterojunction capacitance: the link to band bending and band offsets 1

O. Maslova, A. Brézard-Oudot, M.E. Gueunier-Farret, J. Alvarez, W. Favre, D. Muñoz, A.S. Gudovskikh, J.-P. Kleider
  • Canadian Journal of Physics, July 2014, Canadian Science Publishing
  • DOI: 10.1139/cjp-2013-0544

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http://dx.doi.org/10.1139/cjp-2013-0544